Hostname: page-component-cd9895bd7-fscjk Total loading time: 0 Render date: 2024-12-22T11:42:23.441Z Has data issue: false hasContentIssue false
  • English
  • Français

Real-Time Optical Monitoring of Tungsten Nucleation During Laser Induced Pyrolytic Cvd

Published online by Cambridge University Press:  15 February 2011

Xiafang Zhang  and
Susan D. Allen
Xiafang Zhang
Affiliation:
Tulane University, Laser Microfabrication Lab, New Orleans, LA 70118
Susan D. Allen
Affiliation:
Tulane University, Laser Microfabrication Lab, New Orleans, LA 70118
Get access

Abstract

The nucleation of tungsten on bare Si and SiO2/Si surfaces by Ar ion laser induced CVD has been studied with high speed real-time specular reflection and scattering. Our experimental results show that the induction time of tungsten nucleation decreases with laser power and is longer on thicker SiO2 surfaces than on thin native SiO2 surfaces at the same laser power. The activation energy of tungsten nucleation on native SiO2/Si obtained from an Arrhenius plot of induction time is about 33 kJ/mol at temperatures less than 1000 K and 16 kJ/mol at temperatures higher than 1000 K. The results on bare Si with and without H2 reveal that the initial reaction mechanism appears to be the same in both cases. An Arrhenius plot of induction time shows two different apparent activation energies at different temperature ranges, which suggest that W nucleation is controlled by H atom desorption from the Si surface at temperatures less than 714 K and is dominated by Si atom reduction of WF6 molecules at surface temperatures greater than 800 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 619
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Kepten, A., Reisman, A., Ray, M., Smith, P.L., Temple, D., and Tapp, F., J. Electrchem Soc., 139, 2331 (1992).Google Scholar
2 Takano, A., Kawasaki, M., and Koinuma, H., J. Appl. Phys. 73, 7987 (1993).Google Scholar
3 Naito, N., Takano, A., Sumiya, M., and Kawasaki, M., Appl. Phys. Lett. 66, 1071 (1995).Google Scholar
4 Morita, M., Ohmi, T., Hasegawa, E., Kawakami, M., and Ohwada, M., J. Appl. Phys. 68, 1272 (1990).Google Scholar
5 Chen, Q.J., to be published in Ph.D. Dissertation, University of Iowa.Google Scholar
6 Vorburger, T.V., Marx, E., and Lettieri, T.R., Appl. Optics, 32, 3401 (1993).Google Scholar
7 O'Donnell, K.A. and Mendez, E.R., J. Opt. Soc. Am. A4, 1194 (1987).Google Scholar
8 Sinniah, K., Sherman, M.G., Lewis, L.B., Weinberg, W.H., Yates, J.T. Jr., and Janda, K.C., J. Chem. Phys. 92, 5700 (1990).Google Scholar
9 Chabal, Y.J., Higashi, G.S., Raghavachari, K., and Burrows, V.A., J. Vac. Sci. Technol., A7, 2104 (1989).Google Scholar
10 Yarmoff, J.A., and McFeely, F.R., J. Appl. Phys. 63, 5213 (1988).Google Scholar