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Real-Time ESR Observation During Film Growth of a-Si:H

Published online by Cambridge University Press:  15 February 2011

S. Yamasaki ,
T. Umeda ,
J. Isoya  and
K. Tanaka
S. Yamasaki
Affiliation:
Joint Research Center for Atom Technology - National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR), 1–1–4, Higashi, Tsukuba, Ibaraki 305, Japan
T. Umeda
Affiliation:
Joint Research Center for Atom Technology - National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR), 1–1–4, Higashi, Tsukuba, Ibaraki 305, Japan
J. Isoya
Affiliation:
Joint Research Center for Atom Technology - National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR), 1–1–4, Higashi, Tsukuba, Ibaraki 305, Japan
K. Tanaka
Affiliation:
Joint Research Center for Atom Technology - National Institute for Advanced Interdisciplinary Research (JRCAT-NAIR), 1–1–4, Higashi, Tsukuba, Ibaraki 305, Japan
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Abstract

In-situ electron-spin-resonance (ESR) measurements of film growth of hydrogenated amorphous silicon (a-Si:H) using a remote hydrogen plasma technique have been performed. The Si dangling-bond signal in a-Si:H during and after deposition has been detected, in addition to the gas-phase ESR signals both of atomic hydrogen and photo-excited SiHx molecules. Dynamic changes of the Si dangling-bond signal intensity were observed when the deposition started and stopped, which has suggested the existence of a subsurface region with higher spin density than that in the bulk region.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 507
Copyright
Copyright © Materials Research Society 1997

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