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Rapid Growth of Thick, IC Quality GaAs From a Flowing Solution

Published online by Cambridge University Press:  28 February 2011

E. E. Crismant ,
J. T. Daly ,
C. B. Roberts ,
D.T. Schaafsma ,
H. J. Gerritsen  and
S. K. F. Karlsson
E. E. Crismant
Affiliation:
Division of Engineering, Brown University, Providence, RI
J. T. Daly
Affiliation:
Department of Physics, Brown University, Providence, RI Currently with Spire Corporation, Bedford, MA
C. B. Roberts
Affiliation:
Department of Physics, Brown University, Providence, RI Currently with Spire Corporation, Bedford, MA
D.T. Schaafsma
Affiliation:
Department of Physics, Brown University, Providence, RI Currently with Bandgap Technology Corporation, Broomfield, CO
H. J. Gerritsen
Affiliation:
Department of Physics, Brown University, Providence, RI
S. K. F. Karlsson
Affiliation:
Division of Engineering, Brown University, Providence, RI
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Abstract

Single crystal layers of gallium arsenide have been grown on <111> and <100> oriented GaAs substrates using a flowing solution of gallium saturated with GaAs. With this novel technique, growth rates as high as 9.Oµm/min have been achieved for 5 minutes, while rates of approximately Aµmlmin are typically achieved for 20 minutes of growth. These figures are in good agreement with a previously developed theoretical model and are about two orders of magnitude greater than those for conventional, static solution, liquid phase epitaxy (LPE) for layer thicknesses greater than lµm. Undoped, p-doped and n-doped layers of high crystallographic and electronic quality have been grown. A description of the technique and some of the electro-optical properties are presented in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 160 , 1989 , 451
Copyright
Copyright © Materials Research Society 1990

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References

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