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A Raman Study of a Metastable Crystalline State in Amorphous SiGe Layers Under cw Laser Illumination: Influence of the Temperature

Published online by Cambridge University Press:  15 February 2011

P. Martin ,
J. Olivares ,
A. Rodriguez ,
J. Sangrador ,
J. Jinenez  and
T. Rodriguez
P. Martin
Affiliation:
Departamento de Fisica de la Materia Condensada, E. T. S. I. Industriales, 47011 Valladolid, Spain.
J. Olivares
Affiliation:
Departamento de Tecnología Electrónica, E. T. S. I. de Telecomunicación, U.P.M., Ciudad Universitaria s/n, 28040 Madrid, Spain.
A. Rodriguez
Affiliation:
Departamento de Tecnología Electrónica, E. T. S. I. de Telecomunicación, U.P.M., Ciudad Universitaria s/n, 28040 Madrid, Spain.
J. Sangrador
Affiliation:
Departamento de Tecnología Electrónica, E. T. S. I. de Telecomunicación, U.P.M., Ciudad Universitaria s/n, 28040 Madrid, Spain.
J. Jinenez
Affiliation:
Departamento de Fisica de la Materia Condensada, E. T. S. I. Industriales, 47011 Valladolid, Spain.
T. Rodriguez
Affiliation:
Departamento de Fisica de la Materia Condensada, E. T. S. I. Industriales, 47011 Valladolid, Spain.
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Abstract

A metastable crystalline state was observed in amorphous SiGe/Si layers under illumination with a cw laser beam (514.5 nm) with power density below the crystallization threshold. The observation of this state was temperature dependent and it was reversible. The structural properties of this metastable crystallization were studied by Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 580: Symposium E – Nucleation & Growth Processes in Materials , 1999 , 387
Copyright
Copyright © Materials Research Society 2000

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References

1. Iverson, R.B., Reif, R.; J.Appl. Phys. 62 (1987) 1675 Google Scholar
2. Gibbons, J.F.; Semiconductors and Semimetals (Academic Press, New York 1984) vol. 17 Google Scholar
3. van Vechten, J.A., Tsu, R., Saris, F.W., Hoonhout, D.; Phys.Lett. 74A (1979) 417 Google Scholar
4. Fauchet, P.M.; Scanning Electron Microsc. 2 (1986) 425 Google Scholar
5. Roorda, S., Sinke, W. C.; Appl. Surf. Sci. 36 (1989) 588 Google Scholar
6. Abdulhadim, I., Beserman, R., Weil, R.; Phys. Rev.B 39 (1989)Google Scholar
7. Solis, J., Siegel, J., Afonso, C.N., Jiménez, J., Garcia, C.; J.Appl. Phys. 82 (1997)Google Scholar
8. Griffiths, J.E., Espinosa, G.P., Remeika, J.P., Phillips, J.C.; Phys. Rev. B 25 (1982) 1272 Google Scholar
9. Olivares, J., Martin, P., Rodriguez, A., Sangrador, J., Jiménez, J., Rodriguez, T.; Thin Solid Fims 354 (1999) in the pressGoogle Scholar
10. Olivares, J., Martin, P., Rodriguez, A., Sangrador, J., Jiminez, J., Rodriguez, T.; MRS Fall Meeting (Boston 1999) Symp. EGoogle Scholar