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A Raman Study of a Metastable Crystalline State in Amorphous SiGe Layers Under cw Laser Illumination: Influence of the Temperature
Published online by Cambridge University Press: 15 February 2011
Abstract
A metastable crystalline state was observed in amorphous SiGe/Si layers under illumination with a cw laser beam (514.5 nm) with power density below the crystallization threshold. The observation of this state was temperature dependent and it was reversible. The structural properties of this metastable crystallization were studied by Raman spectroscopy.
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- Copyright © Materials Research Society 2000