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Pulsed-Laser Crystallized Highly Conductive boron-doped Microcrystalline Silicon

Published online by Cambridge University Press:  15 February 2011

C. E. Nebel ,
B. Dahlheimer ,
U. Karrer  and
M. Stutzmann
C. E. Nebel
Affiliation:
Walter Schottky Institut, TU-München, Am Coulombwall, D-85748 Garching, Germany
B. Dahlheimer
Affiliation:
Walter Schottky Institut, TU-München, Am Coulombwall, D-85748 Garching, Germany
U. Karrer
Affiliation:
Walter Schottky Institut, TU-München, Am Coulombwall, D-85748 Garching, Germany
M. Stutzmann
Affiliation:
Walter Schottky Institut, TU-München, Am Coulombwall, D-85748 Garching, Germany
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Abstract

The preparation of seed lattices, using three interfering beams (TIB) from a pulsed Nd:YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass. The structural and electronic properties of the μc-Si layers are investigated by X-ray, electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped μc-Si, grains up to 1.3 μm in diameter are detected, giving rise ti conductivities of ≃ 2000 S/cm and hole mobilities of ≃ 10cm2/Vs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 331
Copyright
Copyright © Materials Research Society 1997

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References

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