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Properties of GaN Epitaxial Layer Grown by MOVPE on MgAl2O4 Substrate

Published online by Cambridge University Press:  21 February 2011

A. Kuramata ,
K. Horino ,
K. Domen ,
R. Soejima ,
H. Sudo  and
T. Tanahashi
A. Kuramata
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan Tel: +81-462-48-3111, Fax : +81-462-48-5193
K. Horino
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan Tel: +81-462-48-3111, Fax : +81-462-48-5193
K. Domen
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan Tel: +81-462-48-3111, Fax : +81-462-48-5193
R. Soejima
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan Tel: +81-462-48-3111, Fax : +81-462-48-5193
H. Sudo
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan Tel: +81-462-48-3111, Fax : +81-462-48-5193
T. Tanahashi
Affiliation:
Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-01, Japan Tel: +81-462-48-3111, Fax : +81-462-48-5193
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Abstract

We propose a MgAl2O4 substrate for GaN-based laser diodes. We grew GaN epitaxial layers using metal-organic vapor phase epitaxy on a MgAl2O4 substrate. The GaN on the MgAl2O4 showed a narrow X-ray diffraction peak of 310 arcsec, a photoluminescence dominated by the band-edge emission, and good electronic properties. The optical cavity was fabricated by cleaving the GaN on the MgAl2O4, and the stimulated emission from the cavity using optical pumping was observed. We also fabricated a light emitting diode (LED) with a AlGaN/InGaN double-heterostructure. The electroluminescence was dominated by the band-edge emission of InGaN with a narrow FWHM of 13.5 nm. The characteristics of LED on the MgAl2O4 were comparable to that on a A12O3 substrate. MgAl2O4 is feasible as a substrate for laser applications.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 395: Symposium AAA – Gallium Nitride and Related Materials: The First International Symp , 1995 , 61
Copyright
Copyright © Materials Research Society 1996

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References

REFERENCES

1 Amano, H., Sawaki, N., Akasaki, I., and Toyoda, Y., Appl. Phys. Lett. 48, 353 (1986).Google Scholar
2 Nakamura, S., Mukai, T., and Senoh, M., Appl. Phys. Lett. 64, 1687 (1994).Google Scholar
3 Nakamura, S., Senoh, M., Iwasa, N., and Nagahama, S., Jpn.J. Appl. Phys. 34, L797 (1995).Google Scholar
4 Zubrilov, A. S., Nikolaev, V. I., Tsvetkov, D. V., Dmitriev, V. A., Irvine, K. G., Edmond, J. A., and Carter, C. H. Jr., Appl. Phys. Lett. 67, 533 (1995).Google Scholar
5 Ponce, F. A., Krusor, B. S., Major, J. S. Jr., Piano, W. E., and Welch, D. F., Appl. Phys. Lett. 67, 410 (1995).Google Scholar
6 Weeks, T. W. Jr., Bremser, M. D., Ailey, K. S., Carlson, E., Perry, W. G., and Davis, R. F., Appl. Phys. Lett. 67, 401 (1995).Google Scholar
7 Kuramata, A., Horino, K., Domen, K., Shinohara, K., and Tanahashi, T., Appl. Phys. Lett. 67, 2521 (1995).Google Scholar
8 Chen, Q., Yang, J. W., Sun, C. J., and Asif Khan, M., in 37th Electronic Materials Conference (1995).Google Scholar
9 Amano, H., Kito, M., Hiramatsu, K., and Akasaki, I., Jpn.J. Appl. Phys. 28, L2112 (1989).Google Scholar
10 Nakamura, S., Mukai, T., Senoh, M., and Iwasa, N., Jpn.J. Appl. Phys. 31, L139 (1992).Google Scholar
11 Nakamura, S., Jpn.J. Appl. Phys. 30, L1705 (1991).Google Scholar
12 Kuznia, J. N., Asif Khan, M., and Olson, D. T., J. Appl. Phys. 73, 4700 (1993).Google Scholar
13 Feritta, K. G., Holmes, A. L., Neff, J. G., Ciuba, F. J., and Dupuis, R. D., Appl. Phys. Lett. 65, 1823 (1994).Google Scholar
14 Asif Khan, M., Olsen, D. T., Van Hove, J. M., and Kuznia, N., Appl. Phys. Lett. 58,1515 (1991).Google Scholar
15 Amano, H., Asahi, T., and Akasaki, I., Jpn.J. Appl. Phys. 29, L205 (1990).Google Scholar
16 Yang, X. H., Schmidt, T. J., Shan, W., Song, J. J., and Goldenberg, B., Appl. Phys. Lett. 66, 1 (1995).Google Scholar