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Preparation of SiC-Diamond Nanocomposites
Published online by Cambridge University Press: 16 February 2011
Abstract
Compacts of composites SiC-diamond were made by infiltration of Si into nanocrystalline diamond powders in a toroid-type press under the pressure of 7.7 GPa at 1300 °C. In-situ high pressure diffraction studies of these processes were performed in MAX80 cubic anvil press at a pressure of 8.5 GPa in temperatures up to 1800°C in HASYLAB at DESY, Hamburg, Germany. Sintering was performed for (i) pure nanocrystalline diamond powders, (ii) a mixture of nanocrystalline powders of diamond and nanocrystalline SiC, (iii) a mixture of nanocrystalline diamond with microcrystalline Si powders and (iv) compacts of nanocrystalline diamond infiltrated by Si. The SiC-diamond composites obtained by infiltration of Si have best physical properties: hardness similar to conventional diamond compacts (approximately 50 GPa), highest density 3.35 g cm-3 and uniform nanocrystalline microstructure.
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- Copyright © Materials Research Society 1999