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Photoinduced Paramagnetic Defects in Amorphous Silicon Dioxide

Published online by Cambridge University Press:  25 February 2011

J. H. Stathis  and
M. A. Kastner
J. H. Stathis
Affiliation:
Department of Physics and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
M. A. Kastner
Affiliation:
Department of Physics and Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139
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Abstract

Several paramagnetic defects are created by exposure of amorphous SiO2 to sub-band-gap light. The spectra of the dominant centers can be isolated by using their annealing, microwave power, and excitation-photonenergy dependence. The results are discussed in terms of specific models for the intrinsic defects in a-SiO2.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 61: Symposium P – Defects in Glasses , 1985 , 161
Copyright
Copyright © Materials Research Society 1986

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References

1. Kastner, M., Adler, D., Fritzsche, H., Phys Rev. Lett. 37, 1504 (1976).Google Scholar
2. Stathis, J. H., Kastner, M. A., Phys. Rev. B. 29, 7079 (1984).CrossRefGoogle Scholar
3. Stathis, J. H., Kastner, M. A., AIP Conf. Proc. 120 78 (1984).Google Scholar
4. Stathis, J. H., Kastner, M. A., Proc. 11th International Conf. Amorphous and Liquid Semiconductors, edited by Evangelisti, F. and Stuke, J., Rome 1985, J. Non-Cryst. Solids, in press.Google Scholar
5. Stathis, J. H., Kastner, M. A. (to be published).Google Scholar
6. Weeks, R. A., J. Appl. Phys. 27, 1376 (1956); R. A. Weeks, C. M. Nelson J. Appl. Phys. 31, 1555 (1960); D. L. Griscom, E. J. Friebele, G. H. Sigel, Solid State Commun. 15, 479 (1974).Google Scholar
7. Castle, J. G., Feldman, D. W., Klemens, P. G., Weeks, R. A., Phys. Rev. 130, 577 (1963); D. L. Griscom, Phys. Rev. B 20, 1823 (1979).Google Scholar
8. Atkins, P. W., Symons, M. C. R., The Structure of Inorganic Radicals, (Elsevier, Amsterdam, 1967).Google Scholar
9. Wilson, T., (private communication).Google Scholar
10. Edwards, A. H., Fowler, W. B., Phys. Rev. B 26, 6649 (1982).CrossRefGoogle Scholar
11. Friebele, E. J., Sigel, G. H., Griscom, D. L., Appl. Phys. Lett. 28, 516 (1976).Google Scholar
12. Street, R. A., Lucovsky, G., Solid State Commun. 31, 289 (1979).Google Scholar
13. Anderson, P. W., Phys. Rev. Lett. 34, 953 (1975)Google Scholar
14. Street, R. A., Mott, N. F., Phys. Re-v. Lett. 35, 1293 (1975).CrossRefGoogle Scholar
15. Griscom, D. L., Proc. Materials Res. Coc. Europe, Strasbourg, 1984 (preprint).Google Scholar
16. Griscom, D. L., Friebele, E. J., Phys. Rev. B 24, 4896 (1981).CrossRefGoogle Scholar