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Pentacene Thin Film Transistors and Circuits: Influence of Processing and Device Design

Published online by Cambridge University Press:  01 February 2011

D. Knipp ,
R. A. Street ,
B. Krusor  and
J. HO
D. Knipp
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
R. A. Street
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
B. Krusor
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
J. HO
Affiliation:
Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304
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Abstract

The influence of different dielectrics on the structural and electronic properties of pentacene films and TFTs is discussed. The pentacene films were thermally evaporated on inorganic dielectrics compatible with flexible substrates. A strong correlation between morphology and structural properties of the pentacene films and the mobility of the TFTs was observed for all the dielectrics studied. In the case of plasma enhanced chemical vapor deposited (PECVD) silicon nitride and silicon oxide dielectrics the growth of pentacene is mainly determined by the roughness of the dielectric. The roughness inhibits the ordering of pentacene molecules on the surface. However, by optimizing the fabrication process of the dielectrics, we have achieved similar pentacene mobilities on PECVD dielectrics and thermal oxide (0.4 cm2/Vs), without employing self-assembled monolayers like octadecyltrichlorosilane (OTS). An OTS treatment of oxide based dielectrics leads to an increase of the mobility by a factor of 2-3 up to >1cm2/Vs for thermal oxide. Pentacene films on inorganic dielectrics exhibit mobilities from of 0.2-1.2 cm2/Vs and high on/off ratios between 107 and 108.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 725: Symposium P – Organic and Polymeric Materials and Devices-Optical, Electrical, and Optoelectronic Properties , 2002 , P5.2
Copyright
Copyright © Materials Research Society 2002

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