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Passivation of Defects in ZnO by Hydrogen Plasma Irradiation

Published online by Cambridge University Press:  11 February 2011

Naoki Ohashi ,
Takamasa Ishigaki ,
Takashi Sekiguchi ,
Isao Sakaguchi  and
Hajime Haneda
Naoki Ohashi
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Takamasa Ishigaki
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Takashi Sekiguchi
Affiliation:
Nano-Materials Laboratory, National Institute for Materials Science, 1–2–1 Sengen, Tsukuba, Ibaraki 305–0047, Japan
Isao Sakaguchi
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
Hajime Haneda
Affiliation:
Advanced Materials Laboratory, National Institute for Materials Science, 1–1 Namiki, Tsukuba, Ibaraki 305–0044, Japan
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Abstract

Hydrogen doping effects on luminescence properties of bulk ZnO samples were examined by using a pulse-modulated plasma irradiation technique. Three kinds of ZnO samples, including both single- and poly-crystals, were employed as specimens. Secondary-ion-mass-spectroscopy analysis revealed that the surface layer to 100 nm was doped with hydrogen after the irradiation and its concentration was in the order of 1017 cm-3. The efficiency of band edge emission was increased by the hydrogenation. However, the degree of the improvements depended on impurity and defect concentration in the original samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 744: Symposium M – Progress in Semiconductors II–Electronic and Optoelectronic Applications , 2002 , M5.3
Copyright
Copyright © Materials Research Society 2003

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References

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