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Published online by Cambridge University Press: 25 February 2011
Ni foils and samples consisting of bilayers of Ni or Fe on Al, Ti or Si were implanted at room temperature with 15N+ ions to fluences of around 1×l017 N/cm2. The concentration depth profiles of 15N were determined with nuclear reaction analysis before and after vacuum annealing. It was found that the penetrability for N atoms of the surface and the solid/solid interface plays an important role in the N redistribution during implantation or annealing. The formation of a nitride layer or nitride clusters in Ni and Fe was deduced. Parameters for N migration determined for the metals under investigation are discussed in terms of models.