Hostname: page-component-cd9895bd7-hc48f Total loading time: 0 Render date: 2024-12-30T16:54:01.084Z Has data issue: false hasContentIssue false
  • English
  • Français

Oxygen Effect in Diamond Deposition at Low Temperatures

Published online by Cambridge University Press:  26 February 2011

Y. Liou ,
A. Inspektor ,
R. Weimer ,
D. Knight  and
R. Messier
Y. Liou
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
A. Inspektor
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
R. Weimer
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
D. Knight
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
R. Messier
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
Get access

Abstract

Diamond thin films were deposited on different substrates at low temperatures (lowest temperature∼ 300°C, estimated) in a microwave plasma enhanced chemical vapor deposition (MPCVD) system. The deposited films were amorphous carbon or diamond films depending on the different gas mixtures used. The growth rate of diamond thin films was decreased by adding oxygen to the gas mixture. The addition of oxygen to the gas mixtures was found to be important for diamond growth at low temperatures. Different concentrations of oxygen have been added into the gas mixture. Without oxygen, the deposited films were white soots and easily scratched off. Increasing the oxygen input improved the quality of the Raman peaks and increased the film transpancy. The diamond films were also characterized by scanning electron microscopy (SEM).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 109
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFRENCES

1. Hirose, Y. and Terasawa, T., Jpn. J. Appl. Phys. 25, 519 (1986).Google Scholar
2. Kawato, T. and Kondo, K., Jpn. J. Appl. Phys. 26, 1429 (1987).Google Scholar
3. Tanaka, H., Sato, K., Saito, Y. and Miyadera, H., Proc. 8th Int. Symp. on Plasma Chemistry, vol 1, ed. by Akashi, K. and Kinabara, A., (International Union of Pure and Applied Chemistry, Tokyo, Japan, 1987), p. 2463.Google Scholar
4. Saito, Y., Sato, K., Tanaka, H., Fujita, K. and Matuda, S., J. Mat. Sci. 23, 842 (1988).Google Scholar
5. Mucha, J. A., Flamm, D. L. and Ibbotson, D. E., in Extended Abstracts of 19th Biennial Conference on Carbon, (Penn State, University Park, 1989), p. 386.Google Scholar
6. Liou, Y., Inspektor, A., Weimer, R. and Messier, R., Appl. Phys. Lett. 55, 631 (1989).Google Scholar
7. Fang, P. H. and Kinnier, J. H., J. Mater. Res. 4, 1243 (1989).Google Scholar
8. Liou, Y., Inspektor, A., Knight, D., weimer, R., Pickrell, D., Badzian, A. R. and Messier, R., SPIE, (1989, in press).Google Scholar
9. Badzian, A. R., Badzian, T. and Pickrell, D., SPIE 969, 14 (1988).Google Scholar
10. Kitabatake, M. and Wasa, K., J. Appl. Phys. 58, 1693 (1985).Google Scholar
11. Aiyer, C. R., Gangal, S. A., Montasser, K., Morita, S. and Hattori, S., Thin Solid Films 163, 229 (1988).Google Scholar
12. Inspektor, A., McKenna, T., Liou, Y., Bourget, L., Spear, K. and Messier, R., Proc. Ist Int. Symp. on Diamond and Diamond-Like Films, (The Electrochemical Society, Pennington, NJ, 1989), p. 342.Google Scholar
13. Inspektor, A., Liou, Y., McKenna, T. and Messier, R., Surf. Coat. Technol. (1989, in press).Google Scholar
14. Bachmann, P., Drawl, W., Knight, D., Weimer, R. and Messier, R., in Extended Abstracts Diamond and Diamond-Like Materials Synthesis, edited by Johnson, G., Badzian, A. and Geis, M. (Material Research Society, Pittsburgh, 1988), p. 99.Google Scholar
15. Knight, D. and White, W. B., J. Mater. Res., 4, 385 (1989).Google Scholar
16. Badzian, A. R., Badzian, T., Roy, R., Messier, R. and Spear, K. E., Mat. Res. Bull. 23, 531 (1988).Google Scholar
17. Frenklach, M. and Wang, H., in Diamond Technology Initative Symposium [Stategic Defense Initiative Organization Office of Innovative Science and Technology- Office of Naval Research (SDIO/IST-ONR), Crystal City, VA, July 1989], T10.Google Scholar