Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-06-20T20:19:00.498Z Has data issue: false hasContentIssue false
  • English
  • Français

Outdiffusion of Magnesium from Mg + implanted GaAs.

Published online by Cambridge University Press:  26 February 2011

H. Baratte ,
T. N. Jackson ,
D. K. Sadana ,
J. F. Degelormo ,
G.J. Scilla  and
F. Cardone
H. Baratte
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, NY10598
T. N. Jackson
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, NY10598
D. K. Sadana
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, NY10598
J. F. Degelormo
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, NY10598
G.J. Scilla
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, NY10598
F. Cardone
Affiliation:
IBM Thomas J. Watson Research Center Yorktown Heights, NY10598
Get access

Abstract

Magnesium implanted at high doses (1×1014cm−2 for a 120keV implant energy) into GaAs diffuses out of the crystal upon annealing. The outdiffusion is reduced, but not eliminated, when rapid thermal annealing is employed rather than furnace annealing. We have investigated various mechanisms that may explain this large outdiffusion. The high vapor pressure of the magnesium is not responsible for the outdiffusion since beryllium, which has a low vapor pressure, also outdiffuses. The presence of oxygen in the anneal ambient mostly leads to significant GaAs surface etching. The etching is more pronounced in the case of shallow energy and high dose implants, which suggests some oxygen- magnesium interaction mechanism. A high level of damage at the GaAs surface in the case of shallow magnesium implantation at high dose may also favor rapid outdiffusion of interstitial magnesium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 451
Copyright
Copyright © Materials Research Society 1989

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Naik, I. K., J.Electrochem. Soc., Vol.134, No5., 1987.CrossRefGoogle Scholar
[2] Blunt, R.T., Szweda, R., Lamb, M.S.M., Cullis, A.G., Electron. Lett. Vol.20, No11, 1984.Google Scholar
[3] McLevige, W.V., Vaidyanathan, K.V., Streeman, B.G., Comas, J., Plew, L., Solid State Communications, Vol.25, pp 1003–1008, 1978.CrossRefGoogle Scholar
[4] Barrett, N.J., Bartle, D.C., Nicholls, R., Grange, J,D,Google Scholar
[5] Gandhi, S.K., in VLSI fabrication principles, silicon and gallium arsenide, edited by , Wiley, pp.113–128.Google Scholar
[6] Tiwari, S., Deluca, J.C., Deline, V.R.. Inst, Phys, Conf. Ser. No.74, Chapter 2 Int. Symp. GaAs and related compounds, Biarritz, 1984. I/SGoogle Scholar
[7] Chambom, P., Berth, M., Prevot, B., Appl. Phys. Lett. 46 (2), 15 January 1985.Google Scholar
[8] Friedel, P., Landesman, J-P., Boher, P., J.Schneider. .J. Vac. Sci. Technol. B 5(4), Jul/Aug 1987.Google Scholar