Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-17T19:49:34.302Z Has data issue: false hasContentIssue false
  • English
  • Français

Orientation Dependence of CdTe/Si Grown by MBE

Published online by Cambridge University Press:  21 February 2011

L. A. Almeida ,
Y. P. Chen ,
J. P. Faurie ,
David J. Smith ,
S.-C. Y. Tsen  and
S. Sivananthan
L. A. Almeida
Affiliation:
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Chicago, IL 60607
Y. P. Chen
Affiliation:
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Chicago, IL 60607
J. P. Faurie
Affiliation:
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Chicago, IL 60607
David J. Smith
Affiliation:
Center for Solid State Science and Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
S.-C. Y. Tsen
Affiliation:
Center for Solid State Science and Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287
S. Sivananthan
Affiliation:
Microphysics Laboratory, Physics Department, University of Illinois at Chicago, Chicago, IL 60607
Get access

Abstract

In this study CdTe (111)B was grown by molecular beam epitaxy on vicinal Si(001) substrates, with a variety of substrate tilt angles (θ), and tilt directions (φ) relative to [110]. Layer quality, and content of double-domain and microtwin defects were evaluated by double crystal rocking curve (DCRC) full width at half maximum (FWHM) and x-ray diffraction, respectively. Transmission electron microscopy (TEM) was used to study interface quality and the nature of structural defects as a function of epilayer thickness. In the present investigation, substrate preparation and growth conditions, particularly initiation conditions, are correlated with Si (001) tilt. It has been found that oxide desorption processes can depend strongly on θ, especially for larger values of θ (> 4°). Currently, we routinely produce single domain, twin-free CdTe(111)B epilayers on vicinal Si (001) substrates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 399: Symposium D – Evolution of Epitaxial Structure and Morphology , 1995 , 343
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Sporken, R., Sivananthan, S., Mahavadi, K. K., Monfroy, G., Boukerche, M., and Faurie, J.-P., Appl. Phys. Lett., 55, 1879 (1989).Google Scholar
2 Sporken, R., Lange, M. D., Faurie, J. P., and Petrozello, J., J. Vac. Sci. Technol. B 9, 1651 (1991).Google Scholar
3 Smith, D. J., Tsen, S.-C. Y., Chen, Y. P., Faurie, J.-P. and Sivananthan, S., Appl. Phys. Letts., 67, 1591 (1995).Google Scholar
4 Tsen, S.-C. Y., Smith, D. J., Hutchins, J. W., Skromme, B. J., Chen, Y. P. and Sivananthan, S., J. Crystal Growth, in press.Google Scholar
5 Sivananthan, S., Chen, Y. P., Wijewarnasuriya, P. S., Faurie, J. P., Smith, F. T., and Norton, P. W. (Proceedings of the 7th International Conference on Narrow Gap Semiconductors 1995 in press)Google Scholar
6 Smith, F. T., Norton, P. W., Vecchio, P. L., Hartle, N., Weiler, M., Karam, N. H., Sivananthan, S. and Chen, Y. P., J. Electron. Mater., 24, 1287 (1993).Google Scholar
7 Kern, W., and Puotinen, D. A., RCA Review, 31, pp. 187–206 (1970).Google Scholar
8 Chen, Y. P., Sivananthan, S., and Faurie, J. P., J. Electron. Mater., 22, p. 951 (1991).Google Scholar
9 Bravman, J. C. and Sinclair, R., J. Electron Microsc. Tech. 1, p. 53 (1984).Google Scholar