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Optoelectronic Properties of a-Si:H Films Deposited From He-Diluted Silane

Published online by Cambridge University Press:  01 January 1993

C. Swiatkowski ,
P.Rocai Cabarrocas  and
M. Kunst
C. Swiatkowski
Affiliation:
Hahn-Meitner-Institut, S1: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
P.Rocai Cabarrocas
Affiliation:
LPICM, Ecole Polytechnique, Palaiseau, Glienicker Str. 100, 1000 Berlin 39, France
M. Kunst
Affiliation:
Hahn-Meitner-Institut, S1: Solare Energetik, Glienicker Str. 100, 1000 Berlin 39, Germany
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Abstract

In-situ and ex-situ transient photoconductivity measurements of intrinsic a-Si:H films deposited from He-diluted SiH4 are presented. It is shown that material with good optoelectronic properties can be deposited at high deposition rates. The films can already be characterized during the deposition. It is shown that material with fairly different properties can be deposited with a relative low defect density.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 73
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

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