Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-26T11:22:06.975Z Has data issue: false hasContentIssue false
  • English
  • Français

Optical Properties of Ordered Gainp

Published online by Cambridge University Press:  10 February 2011

P. Ernst ,
C. Geng ,
G. Hahn ,
F. Scholz ,
H. Schweizer ,
Yong Zhang  and
A. Mascarenhas
P. Ernst
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
C. Geng
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
G. Hahn
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
F. Scholz
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
H. Schweizer
Affiliation:
4. Physikalisches Institut, Universitit Stuttgart, Pfaffendwaldring 57, 70550 Stuttgart, Germany
Yong Zhang
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA
A. Mascarenhas
Affiliation:
National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401, USA
Get access

Abstract

We use the information from low temperature PLE spectra measured on a set of samples with different degree of order for an investigation of the correlation between the order dependent valence band splitting and band gap reduction. The experimental values are compared with predictions from recent ab initio band structure calculations.

Moreover, we show how the low temperature optical properties of ordered GaInP2 are related to the microstructure of the material. We find a close correlation between the size of the ordered domains and the relative intensity of the intrinsic PL-peak from excitonic recombination compared with the rapidly shifting, below band-gap luminescence emission.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 417: Symposium EE – Optoelectronic Materials-Ordering, Composition Modulation, and Self-Assembled … , 1995 , 19
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Wei, S.-H. and Zunger, A.. Phys. Rev. B 39, 3279 (1989).Google Scholar
[2] Gomyo, A., Suzuki, T. and Iijima, S.. Phys. Rev. Lett. 60, 2645 (1988).Google Scholar
[3] Mascarenhas, A., Kurtz, S., Kibbler, A. and Olson, J. M.. Phys. Rev. Lett. 63, 2108 (1989).Google Scholar
[4] Kurimoto, T. and Hamada, N.. Phys. Rev. B 40, 3889 (1989).Google Scholar
[5] Kondow, M. and Minagawa, S.. Appl. Phys. Lett. 54, 1760 (1989).Google Scholar
[6] Fouquet, J. E., Robbins, V. M., Rosner, J. and Blum, O.. Appl. Phys. Lett 57, 1566 (1990).Google Scholar
[7] DeLong, M. C., Ohlsen, W. D., Viohl, I., Taylor, P. C. and Olson, J. M.. J. Appl. Phys. 70, 2780 (1991).Google Scholar
[8] DeLong, M. C., Mowbray, D. J., Hogg, R. A., Skolnick, M. S., Hopkinson, M., David, J. P. R., Taylor, P. C., Kurtz, S. R. and Olson, J. M.. J. Appl. Phys. 73, 5163 (1993).Google Scholar
[9] Ernst, P., Geng, C., Scholz, F. and Schweizer, H.. Phys. stat. sol. (b) 193 (1996). In print.Google Scholar
[10] Homer, G. S., Mascarenhas, A., Alonso, R. G., Froyen, S., Bertness, K. A. and Olson, J. M.. Phys. Rev. B 49, 1727 (1994).Google Scholar
[11] Wei, S.-H. and Zunger, A.. Appl. Phys. Lett. 56, 662 (1990).Google Scholar
[12] Wei, S.-H., Laks, D. B. and Zunger, A.. Appl. Phys. Lett. 62, 1937 (1993).Google Scholar
[13] Wei, S.-H. and Zunger, A.. Phys. Rev. B 49, 14337 (1994).Google Scholar
[14] Mäder, K. A. and Zunger, A.. Appl. Phys. Lett. 64, 2882 (1994).Google Scholar
[15] Mäder, K. A. and Zunger, A.. Phys. Rev. B 51, 10462 (1995).Google Scholar
[16] Krijn, M. P. C. M.. Semicond. Sci. Technol. 6, 27 (1991).Google Scholar
[17] Zhang, Yong and Mascarenhas, A.. Phys. Rev. B 51, 13162 (1995).Google Scholar
[18] Kittel, C. and Mitchell, A. H.. Phys. Rev. 96, 1488 (1954).Google Scholar
[19] Alonso, R. G., Mascarenhas, A., Horner, G. S., Bertness, K. A., Kurtz, S. R. and Olson, J. M.. Phys. Rev. B 48, 11833 (1993).Google Scholar
[20] Driessen, F. A. J. M., Bauhuis, G. J., Olsthoorn, S. M. and Giling, L. J.. Phys. Rev. 48, 7889 (1993).Google Scholar
[21] Chevallier, J. and Laugier, A.. Phys. stat. sol. (a) 8, 437 (1971).Google Scholar
[22] Zacks, E. and Halperin, A.. Phys. Rev. B 6, 3072 (1972).Google Scholar
[23] Kondow, M., Kakibayashi, H. and Minegawa, S.. J. Crystal Growth 88, 291 (1988).Google Scholar
[24] Bellon, P., Chevalier, J. P., Augarde, E., André, J. P. and Martin, G. P.. J. Appl. Phys. 66, 2388 (1989).Google Scholar
[25] Su, L. C., Ho, I. H. and Stringfellow, G. B.. J. Appl. Phys. 75, 5135 (1994).Google Scholar
[26] Su, L. C., Ho, I. H. and Stringfellow, G. B.. J. Appl. Phys. 76, 3520 (1994).Google Scholar
[27] Hommel, J., Schneider, F., Moser, M., Geng, C., Scholz, F. and Schweizer, H.. Microelectron. Eng. 23, 349 (1994).Google Scholar
[28] Sinha, K., Mascarenhas, A., Horner, G. S., Bertness, K. A., Kurtz, S. R. and Olson, J. M.. Phys. Rev. B 50, 7509 (1994).Google Scholar
[29] Schneider, R. P. Jr., Jones, E. D. and Follstaedt, D. M.. Appl. Phys. Lett. 65, 587 (1994).Google Scholar
[30] Jones, E. D., Follstaedt, D. M., Lee, H., Nelson, J. S. and Schneider, R. P., Jr. In 22nd International Conference on the Physics of Semiconductors, edited by Lockwood, D. J.. World Scientific, Singapore 1995.Google Scholar
[31] Fouquet, J. E., Minsky, M. S. and Rosner, S. J.. Appl. Phys. Lett. 63, 3212 (1993).Google Scholar
[32] Geng, C., Ernst, P., Haase, D., Hahn, G., Phillipp, F., Dörnen, A., Schweizer, H. and Scholz, F.. 6th European Workshop on MOVPE, Gent, Belgium (1995).Google Scholar