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Optical and Electrical Properties of Cd Te Laser-Synthetized

Published online by Cambridge University Press:  15 February 2011

L. Baufay ,
A. Pigeolet ,
R. Andrew  and
L.D. Laude
L. Baufay
Affiliation:
Université de l'Etat, Avenue Maistriau, 23 7000 MONS Belgium.
A. Pigeolet
Affiliation:
Université de l'Etat, Avenue Maistriau, 23 7000 MONS Belgium.
R. Andrew
Affiliation:
Université de l'Etat, Avenue Maistriau, 23 7000 MONS Belgium.
L.D. Laude
Affiliation:
Université de l'Etat, Avenue Maistriau, 23 7000 MONS Belgium.
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Abstract

Optical and electrical characterization of CdTe synthetized by laser irradiationofamultilayer film of alternately Cd and Te is achieved. Optical absorption measurements evidence the good quality of these films and show that they have behaviour comparable to the single crystal. The influence of the irradiation conditions on the electrical properties of such CdTe films is discussed; they are compared to single crystal from the point of view of resistivity. It is shown that it is possible to prepare by this means samples devoid of impurity states in the middle of the forbidden gap. Finally, the ohmicity of Au, Al, Cr, ITO and non irradiated Cd/Te sandwich contacts is tested.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 665
Copyright
Copyright © Materials Research Society 1983

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References

REFERENCES

1.Lau, S.S., Maenpaa, Martti and Mayer, James W., Proceedings of MRS Annual Meeting 1980, vol. 1, P. 547.Google Scholar
2.Wittmer, M. and von Allmen, M., Ibid p. 533.Google Scholar
3.Liu, Y.S., Chiang, S.W. and Bacon, F., Ibid p. 117Google Scholar
4.Boyd, I.W., Wilson, J.I.B., West, J.L., Thin Solid Films, 83 (1981) L173.Google Scholar
5.Metev, S.M., Savtchenko, S.K., Stamenov, K.V., Veiko, V.P., Kotov, G.A. and Shandibina, G.D., IEEE J. Qu. El., QE-17 (1981), 2004.Google Scholar
6.Schneider, M., Tews, H., Legros, R., J. of Cryst. Growth, 59 (1982) p. 293–296.Google Scholar
7.Andrew, R., Baufay, L., Pigeolet, A. and Wautelet, M., to be published in the Proceedings of MRS, Symposium of Laser Diagnostics and Photochemical Processing for Semiconductor Devices (1982).Google Scholar
8.Andrew, R., Ledezma, M., Lovato, M., Wautelet, M. and Laude, L.D., Appl. Phys. Lett., 35 (1979), p. 418–420.Google Scholar
9.Andrew, R., Baufay, L., Laude, L.D., Lovato, M., Wautelet, M., J. de Phys., 41 (1980), C4–71.Google Scholar
10.Baufay, L., Dispa, D., Pigeolet, A., Laude, L.D., J. of Cryst. Growth, 59 (1982) p. 143–147.Google Scholar
11.Andrew, R., Baufay, L., Pigeolet, A., Laude, L.D., Proceedings of MRS Annual Meeting 1981, vol. 4 p. 719.Google Scholar
12.Baufay, L., Andrew, R., Pigeolet, A., Laude, L.D., Thin Solid Films, 90 (1982) p. 69–74.Google Scholar
13.Andrew, R., Baufay, L., Pigeolet, A., Laude, L.D., J. of Appl. Phys. 53 (1982) p 4862–4865.Google Scholar
14.Baufay, L., Andrew, R., Pigeolet, A., Laude, L.D., to be puglished in Physica.Google Scholar
15. Courtesy of “Glaceries Saint-Roch - Auvelais - Belgium”.Google Scholar
16. ASTM tables, such CW laser beam induces the cubic structure formation.Google Scholar
17.Myers, T.H., Edwards, S.W., Schetzina, J.F., J. Appl. Phys. 52 (1981) p, 4231.Google Scholar
18.Dimmock, J.O. in : Proc. Intern. Conf. on II–VI Semiconducting Compounds, ed. Thomas, D.G. (Benjamin, New York, 1967) p. 227.Google Scholar
19.Mullin, J.B., Jones, C.A., Straughan, B.W., Royle, A., J. of Cryst. Growth, 59 (1982), p. 135–142.Google Scholar
20.Abrikosov, N.Kh., Bankina, V.F., Poretskaya, L.V., Shelimova, L.E. and Skudnova, E.V. in : Semiconducting II–VI, IV–VI and V–VI Compounds (Plenum, New-York, 1969) p. 31.Google Scholar
21.Sze, S.M. in : Physics of Semiconductor Devices (Wiley-Interscience, NewYork 1969), p. 393–403.Google Scholar
22. Ref. 21, p. 32–38.Google Scholar