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Ohmic Contacts on β-SiC

Published online by Cambridge University Press:  26 February 2011

M. I. Chaudhry ,
W. B. Berry  and
M. V. Zeller
M. I. Chaudhry
Affiliation:
Department of Electrical and Computer Engineering, Clarkson University, Potsdam, NY 13676
W. B. Berry
Affiliation:
Department of Electrical and Computer Engineering, University of Notre Dame, Notre Dame, IN 46556
M. V. Zeller
Affiliation:
Research Sensor Branch, NASA, Lewis Research Center, Cleveland, Ohio 44135
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Abstract

We report on ohmic contacts on β-SiC. The contacts were formed using Ni, NiCr, W, Ti, Wsi2 and TiSi2. Contact resistance measurement and Auger Electron Spectroscopy (AES) were used to study annealing effects on contact materials. Auger analysis of Ni-SiC system indicates that during heat treatment, Ni reacts with Si to form silicide. Similar results are found for NiCr-SiC contacts.

Minimum contact resistance of tungsten and titanium on SiC is measured to be 6.l×10−3 ohm/cm2 and 7.6×10−3 ohm/cm2, respectively. High temperature annealing deteriorates both contacts although for titanium contacts the resistance increases less dramatically as compared to tungsten contacts. The silicides of tungsten and titanium yield lower contact resistance than metallic W and Ti contacts. The contact resistance for Wsi2 and TiSi2 after heat treatment decreases to 3.0×10−4 ohm/cm2 and 1.1×10−4 ohm/cm2, respectively.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 162: Symposium F – Diamond, Silicon Carbide and Related Wide Bandgap Semiconductors , 1989 , 507
Copyright
Copyright © Materials Research Society 1990

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References

REFERENCE

1. Nieberding, W. C. and Powell, J. Anthony, “High-temperature Electronic requirments in Aeropropulsion System”, IEEE Trans. on Industrial Electronics, IE–29, 2, 103 (1982).Google Scholar
2. Addamiano, A., United State Patent Office, No. 3, 510, 733, May 5, 1970 Google Scholar
3. Bermudez, V. M., Appl. Phys. Lett., 42, 70 (1983); Applied Surface Science, 17. 12, (1983).Google Scholar
4. Hellwege, K. H. and Madelung, O., eds. Landolt-Bomstein, , Semiconductors, vol.17, p. 414.Google Scholar
5. Nishino, S., Powell, J. A. and Will, H. A., “Production of Large-area Single-crystal Wafers of cubic SiC for Semiconductor Devices”, Appl. Phys. Lett., vol.42, 5, 460 (1983).Google Scholar
6. Terry, L. E. and Wilson, R. W., Proceedings of the IEEE, 57, 1580 (1969).Google Scholar
7. Kuphal, E., Solid State Electronics, 24, 69 (1981).Google Scholar
8. Ghandi, S. K. and Thiel, F. L., Proceedings of the IEEE, 57 1484 (1969).Google Scholar
9. Zeller, M. V. and Stanchina, W. E., Semiannual Status Report on Material Development of Electrical Contacts for β-SiC, December 1984.Google Scholar
10. Murarka, S. P., Silicides for VLSI Applications, Academic Press, Inc. New York (1983), pp. 88; 33; 39.Google Scholar