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Observation of GaAs/Si Epitaxial Interfaces by Atomic Resolution Electron Microscopy

Published online by Cambridge University Press:  25 February 2011

N. Otsuka ,
C. Choi ,
Y. Nakamura ,
S. Nagakura ,
R. Fischer ,
C. K. Peng  and
H. Morkoc
N. Otsuka
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
C. Choi
Affiliation:
School of Materials Engineering, Purdue University, West Lafayette, IN 47907
Y. Nakamura
Affiliation:
Department of Metallurgy, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo, Japan
S. Nagakura
Affiliation:
Department of Metallurgy, Tokyo Institute of Technology, Ookayama, Meguro-ku, Tokyo, Japan
R. Fischer
Affiliation:
Coordinate Science Laboratory, University of Illinois, Urbana, IL 61801
C. K. Peng
Affiliation:
Coordinate Science Laboratory, University of Illinois, Urbana, IL 61801
H. Morkoc
Affiliation:
Coordinate Science Laboratory, University of Illinois, Urbana, IL 61801
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Abstract

Recent studies have shown that high quality GaAs films can be grown by MBE on Si substrates whose surfaces are slightly tilted from the (100) plane. In order to investigate the effect of the tilting of substrate surfaces on the formation of threading dislocations, the GaAs/Si epitaxial interfaces have been observed with a 1 MB ultra-high vacuum, high voltage electron microscope. Two types of misfit dislocations, one with Burgers vectors parallel to the interface and the other with Burgers vectors inclined from the interface, were found in these epitaxial interfaces. The observation of crosssectional samples perpendicular to each other has shown that the tilting of the substrate surface directly influences the generation of these two types of misfit dislocations. The mechanism of the reduction of threading dislocations by the tilting of the substrate surface is discussed based on these observations.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 67: Symposium A – Heteroepitaxy on Silicon I , 1986 , 85
Copyright
Copyright © Materials Research Society 1986

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References

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