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Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures.

Published online by Cambridge University Press:  01 February 2011

Eisuke Tokumitsu ,
Takaaki Miyasako  and
Masaru Senoo
Eisuke Tokumitsu
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2–19, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
Takaaki Miyasako
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2–19, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
Masaru Senoo
Affiliation:
Precision and Intelligence Laboratory, Tokyo Institute of Technology, R2–19, 4259 Nagatsuta, Midori-ku, Yokohama 226–8503, Japan
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Abstract

We report ferroelectric-gate thin film transistors (TFTs) using indium tin oxide (ITO) as a channel material. Bottom-gate structure TFTs have been fabricated using ferroelectric Pb(Zr, Ti)O3 (PZT) film as a gate insulator and ITO channel. Ferroelectric and ITO layers were formed by the sol-gel technique and RF sputtering, respectively. Drain current-drain voltage (ID-VD) characteristics of PZT/ITO ferroelectric-gate TFTs exhibit typical n-channel transistor operations with clear current saturation and electrical properties were improved by the post annealing. Drain current-gate voltage (ID-VG) characteristics demonstrate clear counterclockwise hysteresis loop due to the ferroelectric gate insulator. The obtained memory window is 2 V. The on/off current ratio of more than 102 has been obtained, which indicates that the ITO channel is sufficiently depleted by the ferroelectric polarization.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 830: Symposium D – Materials and Processes for Nonvolatile Memories , 2004 , D2.6
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

1. Scott, J. F., Paz de Araujo, C.A., Science 246, 1400 (1989).Google Scholar
2. Paz de Araujo, C.A., Cuchiaro, J.D., McMillan, L.D., Scott, M. C., Scott, J. F., Nature 374, 627, (1995).Google Scholar
3. Tokumitsu, E., Fujii, G. and Ishiwara, H., Appl. Phys. Lett. 75, 575 (1999).Google Scholar
4. Tokumitsu, E., Okamoto, K. and Ishiwara, H., Jpn. J. Appl. Phys. 40, 2917 (2001).Google Scholar
5. Miyasako, T., Senoo, M. and Tokumitsu, E., IEICE Trans. Electron. E87–C, 1694 (2004).Google Scholar
6. Prins, M. W. J., Zinnemers, S. E., Cillessen, J. F. M. and Giesbers, J. B., Appl.Phys.Lett. 70, 458 (1997).Google Scholar
7. Carcia, P. F., McLean, R. S., Reilly, M.H. and Nunes, G. Jr,Appl. Phys. Lett. 82, 1117 (2004).Google Scholar