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Multiple-Trapping Model with Meyer-Neldel Effect and Field-Dependent Effects: Time-Of-Flight Simulations for a-Si:H

Published online by Cambridge University Press:  01 February 2011

Jesse Maassen ,
Arthur Yelon ,
Louis-André Hamel  and
Wen Chao Chen
Jesse Maassen
Affiliation:
Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Quebec, Canada
Arthur Yelon
Affiliation:
Department of Engineering Physics, École Polytechnique de Montréal, Montreal, Quebec, Canada
Louis-André Hamel
Affiliation:
Department of Physics, Université de Montréal, Montreal, Quebec, Canada
Wen Chao Chen
Affiliation:
ANIQ R&D Ltd., Montreal, Quebec, Canada
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Abstract

We have included both the Meyer-Neldel rule and field assisted detrapping in the multiple-trapping model, assuming exponential band tails of localized states. Monte Carlo simulations with fixed parameters provide transient currents and comparison of calculated and measured mobility, μ(T,F), and pre-transit dispersion parameter, α1(T,F), which are presented for temperatures ranging from 25 K to 333 K and fields from 20 kV/cm to 400 kV/cm. We observe that the values of μ1(T,F) and α(T,F) are improved with this combined model. Although this model provides satisfactory results for carrier transport for all temperature and field, differences in experimental data causes deviation of simulated results from experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A15.2
Copyright
Copyright © Materials Research Society 2005

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