Article contents
Multiphoton Excitation Studies on GaN with PS Pulses
Published online by Cambridge University Press: 10 February 2011
Abstract
We report the observation of UV photoluminescence (PL) from wurtzite GaN by multiphoton excitation. The dependence of the PL intensity on excitation intensity as well as PL excitation measurements with sub-bandgap photon energies indicate the existence of deep defect states centered at about 1.0 eV above the top of the valence band. This result was confirmed by a sum-frequency excitation spectrum. We correlate these measurements with the omnipresent yellow luminescence in GaN. Our two-photon PL excitation spectrum yields a two-photon absorption coefficient that agrees very well with theoretical predictions.
- Type
- Research Article
- Information
- Copyright
- Copyright © Materials Research Society 1997
References
REFERENCES
- 1
- Cited by