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Movpe of Rare Earth Doped III-V Semiconductors

Published online by Cambridge University Press:  21 February 2011

F. Scholz ,
J. Weber ,
K. Pressel  and
A. Dörnen
F. Scholz
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-W-7000 Stuttgart 80, Germany
J. Weber
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-W-7000 Stuttgart 80, Germany
K. Pressel
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-W-7000 Stuttgart 80, Germany
A. Dörnen
Affiliation:
4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, D-W-7000 Stuttgart 80, Germany
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Abstract

Different III-V compound semiconductors have been doped with the rare earth (RE) elements Yb, Er, and Tm using atmospheric pressure metalorganic vapor phase epitaxy. Best results have been obtained using the novel metalorganic compounds tris-isopropyl-cyclopentadienyl-RE as precursors which have an acceptable vapor pressure and can be used as liquids at bubbler temperatures of 60°-90°C. Only Yb has been found to occupy a regular lattice site in InP, whereas the other RE show complex optical spectra because of their incorporation in form of different centers and clusters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 301: Symposium E – Rare-Earth Doped Semiconductors , 1993 , 3
Copyright
Copyright © Materials Research Society 1993

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References

REFERENCES

[1] Körber, W., Weber, J., Hangleiter, A., Benz, K.W., Ennen, H., Müller, H.D.; J. Crystal Growth 79 (1986), 741 Google Scholar
[2] Nakagome, H., Takahei, K., Homma, Y.; J. Crystal Growth 85, 345 (1987)Google Scholar
[3] Rochaix, C., Rolland, A., Favennec, P. N., Lambert, B., Corre, A. Le, L'Haridon, H., Salvi, M.; J. Electron. Mat. 17, 351 (1988)Google Scholar
[4] Rochaix, C., Rolland, A., Favennec, P. N., Lambert, B., Corre, A. Le, L'Haridon, H., Salvi, M.; Jap. J. Appl. Phys. 27, L2348 (1988)Google Scholar
[5] Isshiki, H., Kobayashi, H., Yugo, S., Kimura, T., Ikoma, T.; Appl. Phys. Lett. 58, 484 (1991)Google Scholar
[6] Klein, P.B., Moore, F.G., Dietrich, H.B.; Appl. Phys. Lett. 58, 502 (1991)Google Scholar
[7] Ennen, H., Wagner, J., Müller, H.D., Smith, R.S.; J. Appl. Phys. 61, 4877 (1987)Google Scholar
[8] Rolland, A., Corre, A. Le, Favennec, P. N., Gauneau, M., Lambert, B., Lecrosnier, D., L'Haridon, H., Moutonnet, D., Rochaix, C.; Electron. Lett. 24, 956 (1988)Google Scholar
[9] Charasse, M. N., Galtier, P., Huber, A.M., Grattepain, C., Chazelas, J., Hirtz, J.P.; Electron. Lett. 24, 1458 (1988)Google Scholar
[10] Uwai, K., Nakagome, H., Takahei, K.; J. Crystal Growth 93, 583 (1988)Google Scholar
[11] Uwai, K., Nakagome, H., Takahei, K.; Appl. Phys. Lett. 50, 977 (1987)Google Scholar
[12] Takahei, K., Nakagome, H.; Inst. Phys. Conf. Ser. 106, 913 (1990)Google Scholar
[13] Nakagome, H., Takahei, K.; Jap. J. Appl. Phys. 28, L2098 (1989)Google Scholar
[14] Williams, D.M., Wessels, B.W.; Appl. Phys. Lett. 56, 566 (1990)Google Scholar
[15] Taguchi, A., Nakagome, H., Takahei, K.; J. Appl. Phys. 68, 3390 (1990)Google Scholar
[16] Neuhalfen, A.J., Wessels, B.W.; Appl. Phys. Lett. 59, 2317 (1991)Google Scholar
[17] Neuhalfen, A.J., Wessels, B.W.; Mat. Res. Soc. Symp. Proc. Vol. 240, p. 195 (1992)Google Scholar
[18] Uwai, K., Nakagome, H., Takahei, K.; Appl. Phys. Lett. 51, 1010 (1987)Google Scholar
[19] Birmingham, J.M., Wilkinson, G.; J. Am. Chem. Soc. 78, 42 (1956)Google Scholar
[20] Hammel, A., Ph.D. Thesis, University Stuttgart, 1989 Google Scholar
[21] Weber, J., Molassioti, A., Moser, M., Stapor, A., Scholz, F., Hörcher, G., Forchel, A., Hammel, A., Laube, G., Weidlein, J., Appi. Phys. Lett. 53, 2525 (1988)Google Scholar
[22] Weber, J., Moser, M., Stapor, A., Scholz, F., Hörcher, G., Forchel, A., Bohnert, G., Hangleiter, A., Hammel, A., Weidlein, J.; J. Crystal Growth 100, 467 (1990)Google Scholar
[23] Laube, G., Kohler, U., Weidlein, J., Scholz, F., Streubel, K., Dieter, R.J., Karl, N., Gerdon, M.; J. Crystal Growth, 45 93 (1988)Google Scholar
[24] Scholz, F., Molassioti, A., Moser, M., Notheisen, B., Streubel, K., Hostalek, M., Pohl, L.; J. Crystal Growth 107, 365 (1991)Google Scholar
[25] Masterov, V.F., Savel'ev, V.P., Shtel'makh, K.F., Zakharenkov, L.F.; Sov. Phys. Sem. 23, 1381 (1989)Google Scholar
[26] Kasatkin, V.A., Masterov, V.F., Romanov, V.V., Samorukov, B.E., Shtel'makh, K.F.; Sov. Phys. Sem. 16, 106 (1982)Google Scholar
[27] Aszodi, G., Weber, J., Uihlein, Ch., Pu-lin, L., Ennen, H., Kaufmann, U., Schneider, J., J. Windscheif; Phys. Rev. B31, 7767 (1985)Google Scholar
[28] Kozanecki, A., Grötschel, R.; J. Appl. Phys. 68, 517 (1990)Google Scholar
[29] Kozanecki, A., Phys. Stat. Solidi A 112, 777 (1989)Google Scholar
[30] Whitney, P.S., Uwai, K., Nakagome, H., Takahei, K.; Appl. Phys. Lett. 53, 2074 (1988)Google Scholar
[31] Zakharenkov, L.F., Kasatkin, V.A., Kesamanly, F.P., Samorukov, B.E., Sokolova, M.A.; Sov. Phys. Semicond. 15, 946 (1981)Google Scholar
[32] Klein, P.B., Solid State Comm. 65, 1097 (1988)Google Scholar
[33] Korber, W., Hangleiter, A.; Appl. Phys. Lett. 52, 114 (1988)Google Scholar
[34] Takahei, K., Taguchi, A., Nakagome, H., Whitney, P.S.; J. Appi. Phys. 66, 4941 (1989)Google Scholar
[35] DeLuca, J.A., Ham, F.S.; J. Electrochem. Soc. 124, 1592 (1977)Google Scholar
[36] Bogomolova, G.A., Vylegzhanin, D.N., Kaminskii, A.A.; Soy. Phys. JETP 42, 440 (1976)Google Scholar
[37] Thonke, K, Pressel, K., Bohnert, G., Stapor, A., Weber, J., Moser, M., Molassioti, A., Hangleiter, A., Scholz, F.; Semicond. Sci. Technol. 5, 1124 (1990)Google Scholar
[38] Weber, J., Moser, M., Stapor, A., Scholz, F., Bohnert, G., Hangleiter, A., Hammel, A., Wiedmann, D., Weidlein, J.; J. Crystal Growth 104, 815 (1990)Google Scholar
[39] Galtier, P., Benyattou, T., Pocholle, J.P., Charasse, M.N., Guillot, G., Hirtz, J.P.; Inst. Phys. Conf. Ser. 106, 327 (1990)Google Scholar
[40] Thonke, K., Hermann, H.U., Schneider, J.; J. Phys. C: Solid State Phys. 21, 5881 (1988)Google Scholar
[41] Hermann, H.U., Diploma Thesis, University Stuttgart, 1986 (unpublished)Google Scholar
[42] Lakshman, S.V.J., Ratnakaram, Y.C.; J. Non-cryst. Solids 94, 222 (1987)Google Scholar
[43] Kozhan, T.M., Kuznetzova, V.V., Sergeev, I.I., Khomenko, V.S.; Zh. Priki. Spektrosk. 41, 929 (1984) [Trans. J. Appl. Spektrosc.41, 1341 (1984)]Google Scholar
[44] Anderson, W.W., J. Chem. Phys. 44, 3283 (1966)Google Scholar
[45] Klein, P.B., Pomrenke, G.S.; Electron. Lett. 24, 1502 (1988) and references given thereinGoogle Scholar
[46] Höfner, S.; Optical Spectra of Transparent Rare Earth Compounds; Academic Press, New York, 1978 Google Scholar
[47] Kiss, Z.K, Yocom, P.N.; J. Chem. Phys. 41, 1511 (1964)Google Scholar
[48] Scholz, F., Weber, J., OttenwAlder, D., Pressel, K., Hiller, C., Dörnen, A., Cordeddu, F., Locke, K, Wiedmann, D.; J. Crystal Growth 124, 470 (1992)Google Scholar
[49] Dörnen, A., Pressel, K, Hiller, C., Haase, D., Weber, J., Scholz, F.; Presentation at MRS Spring Meeting 1993 (San Francisco)Google Scholar
[50] Kozanecki, A., Grötschel, R.; J. Appl. Phys. 64, 3315 (1988)Google Scholar
[51] Takahel, K, Nakagome, H.; J. Appl. Phys. 72, 3874 (1992)Google Scholar