Hostname: page-component-8448b6f56d-tj2md Total loading time: 0 Render date: 2024-04-16T16:37:23.265Z Has data issue: false hasContentIssue false
  • English
  • Français

Morphology and Step Coverage of In-Situ Doped Polysilicon Films Deposited by Single Wafer CVD

Published online by Cambridge University Press:  21 February 2011

Jon T. Fitch ,
Rama I. Hegde ,
Israel Beinglass  and
Mali Venkatesan
Jon T. Fitch
Affiliation:
Advanced Products Research and Development Laboratory, MD-K10, Motorola, 3501 Ed Bluestein Blvd., Austin, TX 78721
Rama I. Hegde
Affiliation:
Advanced Products Research and Development Laboratory, MD-K10, Motorola, 3501 Ed Bluestein Blvd., Austin, TX 78721
Israel Beinglass
Affiliation:
Applied Materials, 3050 Bowers Avenue, M/S 0115, Santa Clara, CA 95054
Mali Venkatesan
Affiliation:
Applied Materials, 3050 Bowers Avenue, M/S 0115, Santa Clara, CA 95054
Get access

Abstract

In-situ doped polysilicon films were deposited by single wafer low pressure chemical vapor deposition (LPCVD) over a temperature range of 590–640°C using SiH4 and dopant gases of B2H6, AsH3, and PH3. Deposition rate, sheet resistance, step coverage and surface roughness measurements of the films were made. The surface chemistry of these three in-situ doping processes is reviewed. Analysis shows how the physical properties of the deposited polysilicon films derive from the surface chemistry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 89
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Learn, Arthur J. and Foster, Derrick W., J. Appl. Phys. 61(5), 1898 (1987).Google Scholar
2. Meyerson, B.S. and Ulbricht, W., J. Electrochem. Soc. 131(10), 2361 (1984).Google Scholar
3. Yu, Ming L., et.al., J. Appl. Phys. 59(12), 4032 (1986).Google Scholar
4. Hajjar, J-J.J. and Reif, Rafael, J. Electrochem. Soc. 137(9), 2888 (1990).Google Scholar
5. Comfort, James H. and Reif, Rafael, J. Appl. Phys. 65(3), 1053 (1989).Google Scholar
6. Maritan, C.M., et.al., J. Electrochem. Soc. 135(7), 1793 (1988).Google Scholar
7. Nakayama, S., et.al., J. Electrochem. Soc. 133(8), 1721 (1986).Google Scholar
8. Comfort, James H. and Reif, Rafael, J. Appl. Phys. 65(3), 1067 (1989).Google Scholar
9. Coronell, Daniel G. and Jensen, Klavs F., J. Electrochem. Soc. 141(9) 2545 (1994).Google Scholar