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Modified Optically Detected Magnetic Resonance Technique for Studies of Defects in Si and GaAs

  • W.M. Chen (a1) and B. Monemar (a1)

Abstract

We discuss one of the major difficulties, namely the strong free carrier induced background signal, in studies of defects in Si and GaAs by optically detected magnetic resonance (ODMR) technique. A modified ODMR technique, namely delayed ODMR, is presented and is shown to be very successful in overcoming this difficulty.

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Modified Optically Detected Magnetic Resonance Technique for Studies of Defects in Si and GaAs

  • W.M. Chen (a1) and B. Monemar (a1)

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