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Models and Mechanisms of III-V Compound Semiconductor Growth by Movpe

Published online by Cambridge University Press:  28 February 2011

Klavs F. Jensen ,
Triantafillos J. Mountziaris  and
Dimitrios I. Fotiadis
Klavs F. Jensen
Affiliation:
Department of Chemical Engineering and Materials ScienceUniversity of MinnesotaMinneapolis, MN 55455
Triantafillos J. Mountziaris
Affiliation:
Department of Chemical Engineering and Materials ScienceUniversity of MinnesotaMinneapolis, MN 55455
Dimitrios I. Fotiadis
Affiliation:
Department of Chemical Engineering and Materials ScienceUniversity of MinnesotaMinneapolis, MN 55455
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Abstract

A kinetic model for metalorganic vapor phase epitaxy (MOVPE) of GaAs from trimethylgallium and arsine is imbedded into two-dimensional transport phenomena descriptions of horizontal and vertical MOVPE reactors. The mechanism involves 15 gas-phase species, 17 gas-phase reactions, 9 surface species and 26 surface reactions. The surface reactions take into account different crystallographic orientations of the GaAs substrate. Carbon incorporation is predicted to occur via carbene containing species. A sensitivity analysis shows that only a few reactions are needed to simulate observed growth rates while the full mechanism is important in computing carbon levels in GaAs. The model predictions are in good agreement with data for trimethylgallium decomposition in hot isothermal tubes, with GaAs growth in horizontal reactors, and with carbon incorporation in vertical reactors. The transport-reaction model demonstrates that both gas-phase and surface reactions as well as transport phenomena are important in predicting MOVPE reactor performance.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 145: Symposium A – III-V Heterostructures for Electronic/Photonic Devices , 1989 , 107
Copyright
Copyright © Materials Research Society 1989

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