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Modeling of the Transition From Active to Passive Oxidation of Si(100)

Published online by Cambridge University Press:  10 February 2011

Da-Jiang Liu ,
Cheol Ho Choi ,
Mark S. Gordon  and
J.W. Evans
Da-Jiang Liu
Affiliation:
Ames Laboratory, and Departments of Chemistry and Mathematics, Iowa State University, Ames, Iowa 50011
Cheol Ho Choi
Affiliation:
Ames Laboratory, and Departments of Chemistry and Mathematics, Iowa State University, Ames, Iowa 50011 Departments of Chemistry and Mathematics, Iowa State University, Ames, Iowa 50011
Mark S. Gordon
Affiliation:
Ames Laboratory, and Departments of Chemistry and Mathematics, Iowa State University, Ames, Iowa 50011 Departments of Chemistry and Mathematics, Iowa State University, Ames, Iowa 50011
J.W. Evans
Affiliation:
Ames Laboratory, and Departments of Chemistry and Mathematics, Iowa State University, Ames, Iowa 50011 Mathematics, Iowa State University, Ames, Iowa 50011
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Abstract

For a Si(100)2×1 surface exposed to oxygen, there is a transition from etching (“active” oxidation via removal of SiO) to “passive” oxidation (buildup of an oxide film) with decreasing surface temperature. The transition depends sensitively on a competition between SiO desorption, and oxide island formation. We analyze these processes utilizing both ab-initio quantum chemistry studies of key energetics and lattice-gas models for the cooperative behavior.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 619: Symposium L – Recent Developments in Oxide & Metal Epitaxy – Theory… , 2000 , 173
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

[1] Engel, T., Surf. Sci. Rep. 18, 91 (1993).Google Scholar
[2] Suemitsu, M., Enta, Y., Miyanishi, Y., and Miyamoto, N., Phys. Rev. Lett. 82, 2334 (1999).Google Scholar
[3] Engstrom, J.R., Bonser, D.J., Nelson, M.M., and Engel, T., Surf. Sci. 256, 317 (1991).Google Scholar
[4] Ebner, C., Seple, J.V., and Pelz, J.P., Phys. Rev. B 52, 16651 (1996); J.V. Seiple and J.P. Pelz, Phys. Rev. Lett. 73, 999 (1994).Google Scholar
[5] Seiple, J.V., Ebner, C., and Pelz, J.P., Phys. Rev. B 53, 15432 (1996).Google Scholar
[6] Shoemaker, J., Burggraf, L.W., and Gordon, M.S., J. Phys. Chem. A 103, 3245 (1999).Google Scholar
[7] Morphological Organization in Epitaxial Growth and Removal, edited by Zhang, Z. and Lagally, M.G. (World Scientific, Singapore, 1998).Google Scholar
[8] Marro, J. and Dickman, R., Nonequilibrium Phase Transitions in Lattice Models (Cambridge University Press, Cambridge, 1999).Google Scholar
[9] Shoemaker, J., Burggraf, L.W., and Gordon, M.S., J. Chem. Phys., 112, 2994 (2000); C.H. Choi and M.S. Gordon, J. Am. Chem. Soc. 121, 11311 (1999).Google Scholar
[10] Uchiyama, T. and Tsukada, M., Phys. Rev. B 55, 9356 (1997).Google Scholar
[11] Hannon, J.B., Bartelt, M.C., Bartelt, N.C., and Kellog, G.L., Phys. Rev. Lett. 81, 4676 (1998); M.C. Bartelt, J.B. Hannon, A.K. Schmid, C.R. Stoldt, and J.W. Evans, Colloids and Surfaces A 165, 373 (2000).Google Scholar
[12] Venables, J.A., Spiller, G.D.T., and Hanbucken, M., Rep. Prog. Phys. 47, 399 (1984).Google Scholar
[13] Jensen, P., Larralde, H., and Pimpinelli, A., Phys. Rev. B 55, 2556 (1997).Google Scholar
[13] Miyata, N., Watanabe, H., and Ichikawa, M., Phys. Rev. Lett. 84, 1043 (2000).Google Scholar