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Modeling Interdiffusion in Superlattice Structures

Published online by Cambridge University Press:  10 February 2011

Richard G. Gass  and
Howard E. Jackson
Richard G. Gass
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45220-0011
Howard E. Jackson
Affiliation:
Department of Physics, University of Cincinnati, Cincinnati, OH 45220-0011
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Abstract

Compositional interdiffusion in Al0.3 Ga0.7 As/GaAs superlattices induced by Si focused ion beam implantation and subsequent rapid thermal annealing is modeled using a set of diffusion equations which take into account the dynamics of the vacancy spatial profile. The inclusion of a new phenomenological term, which depends on the time derivative of the vacancy concentration spatial profile, provides good agreeement with experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 484: Symposium F – Infrared Applications of Semiconductors II , 1997 , 437
Copyright
Copyright © Materials Research Society 1998

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References

1 Kahen, K. B., Rajewaran, G. and Lee, S.-Tong, Appl. Phys. Lett., 53, 1635 (1988)Google Scholar
2 Lee, S.-Tong, Braunstein, G., Fellinger, P., Kahen, K. B. and Rajeswaran, G., Appl. Phys. Lett., 53, 2531 (1988)Google Scholar
3 Kahen, K. B. and Rajeswaran, G., J. Appl. Phys., 66, 545 (1989)Google Scholar
4 Chen, P. and Steckl, A. J., J. Appl. Phys., 77, 5616 (1995)Google Scholar
5 We thank Irving Chyr for the TRIM calculation.Google Scholar