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Materials for Mid-Infrared Semiconductor Lasers

  • A. R. Kost (a1)

Abstract

A variety of semiconductor materials have been used to fabricate diode lasers for the midinfrared. Lasers using the lead salts (e.g. PbSnTe) have been commercially available for some time. Mid-infrared emitting III-V semiconductors (e.g. InGaAsSb) have superior thermal conductivity, and diode lasers fabricated from these materials offer higher powers. Of particular interest are the III-V semiconductor lasers based on type-II superlattices (e.g. InAs/GaInSb). Among the many unique properties attributed to type-Il superlattices are small hole mass, reduced Auger recombination, and less inter-valence band absorption - all important for better lasers. Recent results with Quantum Cascade-type lasers are also very encouraging. This paper summarizes the important semiconductor materials for mid-infrared lasers with emphasis on the type-II superlattices.

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1. Menna, R. J., Capewell, D. R., Martinelli, Ramon U., York, P. K., and Enstrom, R. E., Appl. Phys. Lett. 59, 2127 (1991).
2. Kurtz, S. R., Biefeld, R. M., Dawson, L. R., Baucom, K. C., and Howard, A. J., Appl. Phys. Lett. 64, 812 (1994).
3. Baranov, A. N., Imenkov, A. N., Sherstnev, V. V., and Yakovlev, Yu. P., Appl. Phys. Lett. 64, 2480 (1994).
4. Le, H. Q., Turner, G. W., Eglash, S. J., Choi, H. K., Coppeta, D. A., Appl. Phys. Lett. 64, 152 (1994).
5. Yong-Hang Zhang, Richard Miles, H., and David Chow, H., IEEE J. Of Selected Topics in Quantum Electron. 1, 749 (1995).
6. Choi, H. K. and Turner, G. W., Appl. Phys. Lett. 67, 332 (1995).
7. Chow, D. H., Miles, R. H., Hasenberg, T. C., Kost, A. R., Zhang, Y.-H., Dunlap, H. L., and West, L., Appl. Phys. Lett. 67, 3700 (1995).
8. Grein, C. H., Young, P. M., and Ehrenreich, H., J. Appl. Phys. 76, 1940 (1994).
9. Flatté, M. E., Grein, C. H., Ehrenreich, H., Miles, R. H., Cruz, H., J. Appl. Phys. 78, 4552 (1995).
10. Shi, Z., Tacke, M., Lambrecht, A., and Böttner, H., Appl. Phys. Lett. 66, 2537 (1995).
11. Zandian, M., Arias, J. M., Zucca, R., Gil, R. V., and Shin, S. H., Appl. Phys. Lett. 59, 1022 (1991).
12. Turner, G. W., Manfra, M. J., Choi, H. K., and Connors, M. K., J. of Crystal Growth, 175/176, 825 (1997).
13. Wu, D., Kaas, E., Diaz, J., Lane, B., Rybaltowski, A., Yi, H. J., and Razeghi, M., IEEE Photon. Tech. Lett. 9, 175 (1997).
14. Kost, A. R., West, L., Miles, R. H., Hasenberg, T. C., in In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, Proc. SPIE 3001, 321 (1997).
15. Hasenberg, T. C., Miles, R. H., Kost, A. R., and West, L., IEEE J. Quantum Electron. QE–33, 1403 (1997).
16. Zhang, Y. H., Le, H. Q., Chow, D. H., and Miles, R. H., in Proc. of the 7th Intl. Conference on Narrow Gap Semiconductors, (IOP, Brystol, 1995) pp. 3640.
17. Faist, Jérome, Capasso, Federico, Sitori, Carlo, Sivco, Deborah L., Baillargeon, James N., Hutchinson, Albert L., Chu, Sung-Nee G., and Cho, Albert Y., Appl. Phys. Lett. 70, 2670 (1997).
18. Slivken, S., Jelen, C., Rybaltowski, A., Diaz, L., and Razeghi, M., Appl. Phys. Lett. 71, 2593 (1997).
19. Felix, C. L., Bewley, W. W., Vurgaftman, I., Meyer, J. R., Zhang, D., Lin, C.-H., Yang, R. Q., and Pei, S. S., IEEE Photon. Technol. Lett. 9, 1433 (1997).

Materials for Mid-Infrared Semiconductor Lasers

  • A. R. Kost (a1)

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