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Material and Device Characteristics of MBE-Grown GaN Using a New rf Plasma Source

Published online by Cambridge University Press:  10 February 2011

R. Beresford ,
K. S. Stevens ,
Q. Cui ,
A. Schwartzman  and
H. Cheng
R. Beresford
Affiliation:
Division of Engineering and Center for Advanced Material Research, Box D, Brown University, Providence, RI 02912
K. S. Stevens
Affiliation:
Division of Engineering and Center for Advanced Material Research, Box D, Brown University, Providence, RI 02912
Q. Cui
Affiliation:
Division of Engineering and Center for Advanced Material Research, Box D, Brown University, Providence, RI 02912
A. Schwartzman
Affiliation:
Division of Engineering and Center for Advanced Material Research, Box D, Brown University, Providence, RI 02912
H. Cheng
Affiliation:
EPI MBE Products Group, 1290 Hammond Rd., St. Paul, MN 55110
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Abstract

A new rf plasma nitrogen source has been characterized for growth of GaN on basal-plane sapphire by molecular beam epitaxy. For rf power of 500 W and N2 flow rate of 2 sccm, a maximum GaN growth rate of 0.80 μm/hr is obtained, implying a source efficiency greater than 5%. It is found that the GaN surface roughness is extremely sensitive to V:Il ratio near unity and independent of growth rate in the range 0.3-0.8 μm/hr. Roughness as small as 1.0 nm (rms) is measured by atomic-force microscopy. Microstructure of the high-growth-rate films is similar to other GaN films, as observed in cross-section transmission electron microscope images. The electroluminescence spectra from homojunction light-emitting diodes exhibit a band of nearultraviolet emissions corresponding to the energy separation of the intentional donor and acceptor levels on the two sides of the junction. The intensity of these emissions relative to the visible spectrum increases with drive current density, implying saturation of deep trap levels responsible for the visible light output.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 449: Symposium N – III-V Nitrides , 1996 , 361
Copyright
Copyright © Materials Research Society 1997

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References

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