Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-15T04:35:18.673Z Has data issue: false hasContentIssue false
  • English
  • Français

Linking ab initio Energetics to Experiment: Kinetic Monte Carlo Simulation of Transient Enhanced Diffusion of B in Si

Published online by Cambridge University Press:  10 February 2011

Silva K. Theiss ,
M.-J. Caturla ,
T. Diaz de la Rubia ,
M.C. Johnson ,
Ant Uralt  and
P.B. Griffin
Silva K. Theiss
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA 94550
M.-J. Caturla
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA 94550
T. Diaz de la Rubia
Affiliation:
Lawrence Livermore National Laboratory, Livermore CA 94550
M.C. Johnson
Affiliation:
Avant! Corp., Silicon Business Unit, Fremont CA 94538
Ant Uralt
Affiliation:
Electrical Engineering Dept., Stanford University, Stanford CA 94305
P.B. Griffin
Affiliation:
Electrical Engineering Dept., Stanford University, Stanford CA 94305
Get access

Abstract

We have developed a kinetic Monte Carlo (kMC) simulator that links atomic migration and binding energies determined primarily from first principles calculations to macroscopic phenomena and laboratory time scales. Input for the kMC simulation is obtained from a combination of ab initio planewave pseudopotential calculations, molecular dynamics simulations, and experimental data. The simulator is validated against an extensive series of experimental studies of the diffusion of B spikes in self-implanted Si. The implant energy, dose, and dose rate, as well as the detailed thermal history of the sample, are included. Good agreement is obtained with the experimental data for temperatures between 750 and 950°C and times from 15 to 255 s. At 1050°C we predict too little diffusion after 105 s compared to experiment: apparently, some mechanism which is not adequately represented by our model becomes important at this temperature. Below 1050°C, the kMC simulation produces a complete description over macroscopic time scales of the atomic level diffusion and defect reaction phenomena that operate during the anneals. This simulator provides a practical method for predicting technologically interesting phenomena, such as transient enhanced diffusion of B, over a wide range of conditions, using energetics determined from first-principles approaches.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 538: Symposium J – Multiscale Modelling of Materials , 1998 , 291
Copyright
Copyright © Materials Research Society 1999

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nichols, C. S., Walle, C. G. Van de, Pantelides, S. T., Phys. Rev. B40, 5458 (1989).Google Scholar
2. Harrison, W.A. Mat. Res. Soc. Symp. Proc. in Defects and Diffusion in Silicon Processing Vol. 469, p. 211, Ed. Rubia, T. Diaz de la, Coffa, S., Stolk, P. A., Rafferty, C. S., (1997).Google Scholar
3. Zhu, J., Rubia, T. Diaz de la, Yang, L. H., Mailhiot, C., Gilmer, G. H., Phys. Rev. B54, 4741 (1996).Google Scholar
4. Tang, M., Colombo, L., Zhu, J., Rubia, T. Diaz de la, Phys. Rev. B55, (1997).Google Scholar
5. Gilmer, G. H., Rubia, T. Diaz de la, Stock, D. M. and Jaraiz, M., Nucl. Instrum. and Methods B102, 247 (1995).Google Scholar
6. Zhu, J., Mat. Res. Soc. Symp. Proc. in Defects and Diffusion in Silicon Processing, Vol. 469, p. 151, Ed. Rubia, T. Diaz de la, Coffa, S., Stolk, P. A., Rafferty, C. S., (1997).Google Scholar
7. Pankratov, O., Huang, H., Rubia, T. Diaz de la, Mailhiot, C., Phys. Rev. B (1997).Google Scholar
8. Tian, S., Morris, S. J., Obradovic, B., Morris, M. F., Wang, G., Balamurugan, G., Tasch, A. F., Snell, C., UT-Marlowe, Version 4.0 (1996).Google Scholar
9. Heinisch, H. L., J. Nucl. Mater. 117, 46 (1983).Google Scholar
10. Coffa, Salvatore and Libertino, Sebania, Appl. Phys. Lett. 73, 3369 (1998).Google Scholar