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Light-induced Stability of Layered Amorphous Hydrogenated Silicon Grown with Alternating Substrate Temperature

Published online by Cambridge University Press:  10 February 2011

Jong-Hwan Yoona  and
Czang-Ho Lee
Jong-Hwan Yoona
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Kangwon-do, 200-701, KOREA
Czang-Ho Lee
Affiliation:
Department of Physics, College of Natural Science, Kangwon National University, Kangwon-do, 200-701, KOREA
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Abstract

We present the results of studies on the light-induced stability of undoped layered hydrogenated amorphous silicon films grown with alternating substrate temperature between optimal and non optimal temperatures for device-quality films. Compared to the single layer films grown at optimal substrate temperature, the layered films show improved stability in the lightinduced state. Under intense light illumination of 3 W/cm2, the steady-state defect density of the layered film reached a saturation of 2×1016 cm−3, while the single layer film saturates at about 6×1016 cm−3. It is found that in the completely degraded state the photoconductivity in the layered film is also improved by a factor of two compared to the single layer film.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 387
Copyright
Copyright © Materials Research Society 1996

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