Hostname: page-component-f554764f5-fnl2l Total loading time: 0 Render date: 2025-04-10T05:14:08.787Z Has data issue: false hasContentIssue false
  • English
  • Français

Laser Induced Forward Transfer

Published online by Cambridge University Press:  26 February 2011

R.J. Baseman ,
A. Gupta ,
R.C. Sausa  and
C. Progler
R.J. Baseman
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
A. Gupta
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
R.C. Sausa
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
C. Progler
Affiliation:
IBM T.J. Watson Research Center, Yorktown Heights, NY 10598
Get access

Abstract

The laser induced forward transfer (LIFT) technique employs a pulsed laser to transfer material, originally precoated as a thin film on a transparent support, from that support onto a selected target substrate. LIFT has been used to deposit a variety of thin films, thick films through the repetitive transfer of thin films, multilayer structures through the transfer of appropriately layered precoated films, and metal silicon alloys.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 237
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 Osgood, R.M. Jr. in Photon. Beam, and Chemical Processes at Surfaces , edited by Donnelly, V.M., Herman, I.P., and Hirose, M. (Mater. Res. Soc. Proc. 75 , Pittsburgh, Pennsylvania 1987) pp. 3–17.Google Scholar
2 Adrian, F.J., Bohandy, J., Kim, B.F., Jette, A.N., J. Vac. Sei. Technol., B5, 1490, (1987); J. Bohandy, B.F. Kim, F.J. Adrian, J. Appl. Phys., 60 , 1538 (1986).Google Scholar
3 Baseman, R.J., Andreshak, J.C., Symp A, Fall 1987 MRS Meeting, Boston, MA. Google Scholar
4 von Allman, M.F., Lau, S.S., in Laser Annealing of Semiconductors, edited by Poate, J.M. and Mayer, J.Y. (Academic Press, New York, 1982), pp439–479.Google Scholar
5 Bakos, J.S., Ignacz, P.N., Szigeti, J., Kovacs, J., Appl. Phys. Lett., 51, 734 (1987); D. Manos, D. Ruzic, R. Moore, S. Cohen, J. Vac. Sei. Tech. 20 , 1230 (1982); Y.T. Lie, A. Pospieszczyk, J.A. Tagle, Fus. Tech., 6 , 447 (1984); E.S. Marmar, J.L. Cecchi, S.A. Cohen, Rev. Sei. Instrum., 46 , 1149(1975); R. Koppmann, S.M. Refaei, A. Pospieszczyk, J. Vac. Sei. Technol., A4 , 79 (1986).Google Scholar