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Ion-Assisted Pulsed Laser Deposition of BN Films

  • G. L. Doll (a1), D. C. Chance (a2) and L. Salamanca-Riba (a3)

Abstract

Boron nitride films grown by ion-assisted pulsed laser deposition have been characterized by infrared absorption, auger electron pectroscopy, and transmission electron microscopy. Elemental bonding and the crystallinity of BN films grown in three nitrogen ion energy regimes:high (2500 eV), low (700 eV), and without ions (0 eV) are examined, and the results interpreted within the framework of a compressive stress mechanism for cBN film growth.

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1 Terminello, L. J., Chaiken, A., Lapiano, D. A.-Smith, Doll, G. L., and Sato, T., J. Vac. Sci. Technol. A 12, 2462 (1994).
2 Edgar, J. H. (ed.), Properties of Group III Nitrides, EMIS Datareview Series No. 11, (INSPEC, London, UK, 1994).
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10 Doll, G. L. and Simko, S. J., (unpublished).
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Ion-Assisted Pulsed Laser Deposition of BN Films

  • G. L. Doll (a1), D. C. Chance (a2) and L. Salamanca-Riba (a3)

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