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Investigations of Residual Chlorine on Etched AlCu Metal Lines by Total Reflection X-Ray Fluorescence (TXRF)

Published online by Cambridge University Press:  15 February 2011

R. S. Hockett ,
M. H. Herman ,
X. C. Mu  and
Li-Jia Ma
R. S. Hockett
Affiliation:
Charles Evans & Associates, 301 Chesapeake Drive, Redwood City, CA 94063
M. H. Herman
Affiliation:
Charles Evans & Associates, 301 Chesapeake Drive, Redwood City, CA 94063
X. C. Mu
Affiliation:
Intel Corporation, 3065 Bowers Ave, Santa Clara, CA 95051
Li-Jia Ma
Affiliation:
Intel Corporation, 3065 Bowers Ave, Santa Clara, CA 95051
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Abstract

The present trend in the silicon IC industry is toward the replacement of AlSi metallization by AlCu(Si). However, the addition of Cu to Al(Si) increases the sensitivity of the metallization to moisture corrosion. Total reflection X-Ray Fluorescence (TXRF) with a detection limit in the 1012 atoms/cm2 range is used to measure the residual Cl on Al(Cu) as a function of processing. The results indicate that significant Cl can remain even after standard ash and chemical solvent resist removal. Furthermore, a need is identified to study some unexpected sources of Cl (e.g., air) and the chemistry of its removal from Al films, and this can be now be done easily using TXRF.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 225: Symposium G – Materials Reliability Issues in Microelectronics , 1991 , 329
Copyright
Copyright © Materials Research Society 1991

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References

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