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Investigation on Microvoids in Pecvd a-Si:H

Published online by Cambridge University Press:  01 January 1993

C. Manfredotti ,
F. Fizzotti ,
M. Boero ,
P. Pastorino ,
E. Vittone  and
V. Rigato
E. Vittone
Affiliation:
Experimental Physics Dept., University of Torino, Via Giuria 1, Torino, Italy and Consorzio INFM, Italy
V. Rigato
Affiliation:
Physics Dept., University of Padova, Via Marzuolo 8, Padova, Italy.
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Abstract

The effect of microvoids on optical properties of a-Si:H deposited by PECVD of SiH4 has been investigated in the deposition temperature range between 143°C and 266°C. Microvoids seem not to affect the density up to H concentrations CH of 15%. The density is decreased only by H incorporation, which, at the same time, influences directly the optical energy gap Eg Above CH=15%, microvoids can easily accommodate H and no further variation either of Eg or the index of refraction n can be appreciated. Microvoids are proven to be affected not only by deposition temperature, but also by deposition time and by a further annealing step, even if at a relative extent.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 297: Symposium A – Amorphous Silicon Technology - 1993 , 1993 , 231
Copyright
Copyright © Materials Research Society 1993

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