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Investigation of Processing Parameters on Stability of (SOG) Files on Patterned Si Wafers

Published online by Cambridge University Press:  25 February 2011

S. G. Shyu ,
T. J. Smith ,
S. Baskaran  and
R. C. Buchanan
S. G. Shyu
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign Urbana, Il 61801
T. J. Smith
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign Urbana, Il 61801
S. Baskaran
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign Urbana, Il 61801
R. C. Buchanan
Affiliation:
Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign Urbana, Il 61801
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Abstract

Polymeric sols of SiO2 or siloxane polymers in n-propanol were investigated for use as dielectric and planarization layers on patterned silicon wafers for device application. Spin coating of the sol (SOG) resulted in rapid gelation through solvent evaporation but cracking often occurred on heating. This study examined the influence of SOG composition, deposition process and heating rate on film planarization and cracking. Planarization was found to be enhanced by layer thickness, but cracking stability was reduced. Sequential drying of the applied SOG layers and use of trlethano-lamine as a complexing base was found to significantly reduce cracking tendency in the films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 121: Symposium H – Better Ceramics Through Chemistry III , 1988 , 767
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

Gupta, S. K. and Chin, R. L., Microelectronics Processing-Inorganic Materials Characterization, American Chemical Society, (1986), p.349.CrossRefGoogle Scholar
2. Schiltz, A., Microelectronic Engineering 5, 413–421, (1986)CrossRefGoogle Scholar
3. 'Pai, P. -L., Chetty, A., Roat, R., Cox, N., Ting, C. J., Electrochemical Soc. 134 (11), 2829 (1987)CrossRefGoogle Scholar
4. Chu, J. K., Multani, J. S., Mittal, S. K., Orton, J. T. and Jemen, R., IEEE V-MIC Conf., 474 (1986)Google Scholar
5. Brinker, C. J., Drotning, W. D. and Scherer, G. W,., in Better Ceramic Through Chemistry edited by Brinker, C. J., Clark, D, E. and Ulrich, D. R.(Elsenier, New York, 1985) p.25.Google Scholar
6. Schmidt, H., in Better Ceramic Through Chemistry edited by Brinker, C. J., Clark, D, E. and Ulrich, D. R.(Elsenier, New York, 1985) p.327.Google Scholar
7. Keefer, K. D., in Better Ceramic Through Chemistry edited by Brinker, C. J., Clark, D, E. and Ulrich, D. R.(Elsenier, New York, 1985) p. 15.Google Scholar
8. Shyu, S. G. and Buchanan, R. C., in Electronic Packaging Materials Science III, edited by R. C Sundahl, Jaccodine, R., Jackson, K. A.(Material Research Society, 1988)Google Scholar
9. Aelion, R., Loebel, A, and Eirich, F. J. Amer. Chem. Soc., 72, 5705.(1950).CrossRefGoogle Scholar
10. Yamane, M., Aso, S., and Sakaino, T. J. Mater. Sci., 13, 865, (1978).CrossRefGoogle Scholar