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Interfacial Roughness in GaAs/A1GaAs Multilayers: Influence of Controlled Impurity Addition

Published online by Cambridge University Press:  21 February 2011

S. Nayak
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI-53706
J.M. Redwing
Affiliation:
Dept. of Chemical Engineering, University of Wisconsin, Madison, WI-53706
T.F. Kuech
Affiliation:
Dept. of Chemical Engineering, University of Wisconsin, Madison, WI-53706
D.E. Savage
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI-53706
M.G. Lagally
Affiliation:
Materials Science Program, University of Wisconsin, Madison, WI-53706
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Impurities at heterointerfaces can alter the interfacial structure resulting in changes in physical, electrical and optical properties. We present a study of the interfacial roughness of GaAs/A1xGa1-xAs superlattices which were grown using controlled addition of oxygen at the interface. The interfacial properties were characterized by x-ray diffraction. The morphology of the surface was determined by Atomic Force Microscopy (AFM). X-ray diffraction measurements, both θ-2θ and rocking curves, were used to analyze the correlated and uncorrelated component of the interfacial roughness. A strong difference in the interfacial roughness was observed depending on whether the intentional oxygen incorporation occurred at the GaAs-to-A1GaAs interface or at both interfaces. When oxygen is incorporated at both interfaces, the x- ray reflectivity of the superlattice is decreased considerably resulting from a much higher interfacial roughness. The substrate miscut has a significant effect on RMS roughness, correlated roughness and its correlation length when oxygen is incorporated at the GaAs-to-A1xGa1-xAs interface.

Type
Research Article
Copyright
Copyright © Materials Research Society 1994

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References

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