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Interdiffusion of Al and Ga in (Al,Ga)As/GaAs Quantum Wells

Published online by Cambridge University Press:  26 February 2011

T. E. Schlesinger ,
Jyh-Chwen Lee  and
T. F. Kuech
T. E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA 15213
Jyh-Chwen Lee
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh PA 15213
T. F. Kuech
Affiliation:
IBM T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598
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Abstract

We have employed photoluminescence spectroscopy to determine the interdiffusion of Al and Ga in (Al,Ga)As/GaAs quantum wells. The luminescence due to the n=l electron to heavy hole transition in these wells before and after anneal was measured. A variational calculation was employed to determine the expected position of this luminescence peak both before and after the anneal. A single diffusion coefficient, D, was used to model the interdiffusion of the Al and Ga and from the shifted position of the luminescence peaks under various anneal conditions of time and temperature its value was determined. These measurements were performed as a function of temperature to yield ΔE where D = D0e -ΔE/KT. This diffusion coefficient was also studied as a function of the initial Al composition in the cladding layers which ranged from 0.3 to 1.0.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 77: Symposium D – Interfaces, Superlattices, and Thin Films , 1986 , 241
Copyright
Copyright © Materials Research Society 1987

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