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Intense Visible Luminescence from Thermally-Oxidized Porous Silicon

Published online by Cambridge University Press:  28 February 2011

S. Miyazakj ,
K. Shiba ,
K. Sakamoto  and
M. Hirose
S. Miyazakj
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
K. Shiba
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
K. Sakamoto
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
M. Hirose
Affiliation:
Department of Electrical Engineering, Hiroshima University Higashi-Hiroshima 724, Japan
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Abstract

Photoluminescence from porous silicon oxidized at 800 or 900°C in an N2 +O2 gas mixture has been investigated. The ideal passivation of the porous Si surface with thermally grown oxide results in stable, intense visible-light emission. The steady-state and time-resolved luminescence measured as functions of temperature and excitation power have indicated that a possible pathway for the light emission is the radiative recombination through localized states.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 269
Copyright
Copyright © Materials Research Society 1993

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References

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