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In-Situ Quality Control of the Production of Semiconductor Devices by Microwave Photoconductivity Measurements

Published online by Cambridge University Press:  25 February 2011

C. Swiatkowski
Affiliation:
Dept Si: Solare Energetik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
A. Sanders
Affiliation:
Dept Si: Solare Energetik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
M. Kunst
Affiliation:
Dept Si: Solare Energetik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
G. Seidelmann
Affiliation:
Dept D1: Software-Technik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
C. Haffer
Affiliation:
Dept D1: Software-Technik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
K. Emmelmann
Affiliation:
Dept D1: Software-Technik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
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Abstract

The application of transient photoconductivity measurements in the microwave frequency range to the characterization of semiconductors and semiconductor devices is analyzed. Quality control and in-situ optimization are discussed from a more general point of view and as a concrete example the optimization of the deposition of amorphous silicon films is presented.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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