Hostname: page-component-8448b6f56d-xtgtn Total loading time: 0 Render date: 2024-04-16T13:26:32.773Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Quality Control of the Production of Semiconductor Devices by Microwave Photoconductivity Measurements

Published online by Cambridge University Press:  25 February 2011

C. Swiatkowski ,
A. Sanders ,
M. Kunst ,
G. Seidelmann ,
C. Haffer  and
K. Emmelmann
C. Swiatkowski
Affiliation:
Dept Si: Solare Energetik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
A. Sanders
Affiliation:
Dept Si: Solare Energetik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
M. Kunst
Affiliation:
Dept Si: Solare Energetik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
G. Seidelmann
Affiliation:
Dept D1: Software-Technik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
C. Haffer
Affiliation:
Dept D1: Software-Technik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
K. Emmelmann
Affiliation:
Dept D1: Software-Technik Hahn-Meitner-Institut, Glienicker Strafle 100, 1000 Berlin 39, Germany
Get access

Abstract

The application of transient photoconductivity measurements in the microwave frequency range to the characterization of semiconductors and semiconductor devices is analyzed. Quality control and in-situ optimization are discussed from a more general point of view and as a concrete example the optimization of the deposition of amorphous silicon films is presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 269: Symposium L – Microwave Processing of Materials III , 1992 , 491
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Kunst, M., in Microwave Processing of Materials II, Mat. Res. Soc. Proc. 189, 75 (1991)CrossRefGoogle Scholar
[2] Kunst, M. and Werner, A., J. Appl. Phys. 58, 2236 (1985)CrossRefGoogle Scholar
[3] Madan, A. and Shaw, M.P., The Physics and Anplications of Amorphous Semiconductors, (Academic Press, Boston, 1988).Google Scholar
[4] Neitzert, H.-C. and Kunst, M., to be publishedGoogle Scholar
[5] Kunst, M. and Neitzert, H.-C., J. Appl. Phys. 69, 8320, (1991)CrossRefGoogle Scholar
[6] Kunst, M.,Neitzert, H.-C. and Ruebel, H., Phys. Rev. B 44,1081 (1991)CrossRefGoogle Scholar