Hostname: page-component-78c5997874-t5tsf Total loading time: 0 Render date: 2024-11-19T12:16:30.722Z Has data issue: false hasContentIssue false
  • English
  • Français

In-Situ Monitoring during PLD of Complex Oxides using Rheed at High Oxygen Pressure

Published online by Cambridge University Press:  10 February 2011

Guus J. H. M. Rijnders ,
Gertian Koster ,
Dave H. A. Blank  and
Horst Rogalla
Guus J. H. M. Rijnders
Affiliation:
Low Temperature Division, Department of Applied Physics, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
Gertian Koster
Affiliation:
Low Temperature Division, Department of Applied Physics, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
Dave H. A. Blank
Affiliation:
Low Temperature Division, Department of Applied Physics, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
Horst Rogalla
Affiliation:
Low Temperature Division, Department of Applied Physics, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands.
Get access

Abstract

Several groups have monitored the growth of complex oxides in-situ using Reflection High Energy Electron Diffraction (RHEED). In order to utilize RHEED during growth, films are deposited at low background oxygen pressures. Because of the low oxidation power at low pressures, low substrate temperatures have to be used. This hampers, in general, the film crystallinity. Furthermore, the background pressure in Pulsed Laser Deposition (PLD) is an important parameter, because it influences the shape and size of the plasma and, therefore, the deposition rate and homogeneity of the film.

We have developed a high-pressure RHEED system, which can be used for growth monitoring during the deposition of complex oxides at standard PLD conditions. Clear diffraction patterns are observable up to 50 Pa, due to the minimized scattering losses.

SrTi03 substrate treatments as well as growth studies of Yba2Cu3O7−δ, using atomic layers of SrO or BaO as a buffer-layer, will be discussed in this contribution. It will be shown that monitoring and control of thin film growth by PLD on an atomic level is feasible, even in quite high background pressures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 502: Symposium II – In Situ Process Diagnostics & Intelligent Materials Processing , 1997 , 209
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Bozovic, I. and Eckstein, J. N., MRS Bulletin 20, (1995) pp. 32 Google Scholar
2. Locquet, J.-P., Jaccard, Y., Gerber, C., and Mächler, E., Appl. Phys. Lett. 63 (1993) pp. 1426 Google Scholar
3. Locquet, J.-P., and Mächler, E., MRS Bulletin 19, (1994) pp. 39 Google Scholar
4. Tsuchiaya, R., Kawasaki, M., Kubota, H., Nishino, J., Sato, H., Akoh, H., Koinuma, H., Appl. Phys. Lett. 71 (1997) pp. 1570 Google Scholar
5. Rijnders, Guus J. H. M., Koster, Gertjan, Blank, Dave H. A., and Rogalla, Horst, Appl. Phys. Lett 70 (14), (1997) pp. 1888 Google Scholar
6. Kawasaki, M., Takahashi, K., Maeda, T., Tsuchiya, R., Shinohara, M., Ishiyama, O., Yonezawa, T., Yoshimoto, M. and Koinuma, H., Science 266 (1994) pp. 1540 Google Scholar