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Initial Growth of Microcrystalline Silicon on Atomically Flat Hetero-Substrate

Published online by Cambridge University Press:  15 February 2011

K. Saitoh ,
M. Kondo  and
A. Matsuda
K. Saitoh
Affiliation:
Central Research Institute Mitsui Toatsu Chemicals, Inc., 1190 Kasama-cho, Sakae-ku, Yokohama 247, Japan
M. Kondo
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory Umezono, Tsukuba-shi, Ibaraki, 305, Japan
A. Matsuda
Affiliation:
Thin Film Silicon Solar Cells Super Lab., Electrotechnical Laboratory Umezono, Tsukuba-shi, Ibaraki, 305, Japan
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Abstract

Initial growth of microcrystalline silicon μ-Si:H) deposited on an atomically flat GaAs (001) wafer using a RF glow-discharge decomposition of hydrogen diluted monosilane gas mixture has been studied by means of atomic force microscope (AFM), Auger electron spectroscopy (AES), and cross-sectional transmitssion electron microscopy (XTEM).

It is shown that the initial growth of μc-Si:H deposited at a substrate temperature of 50∼250°C consists of four successive stages, i.e., (1) a layer-by-layer growth of a-Si:H up to d ∼5 Å, (2) island formation of a-Si:H, (3) the coalescence of the islands and the nucleation of microcrystallite at d∼ 10–40 Å depending on the growth temperature, and (4) a rapid roughening with microcrystalline growth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 385
Copyright
Copyright © Materials Research Society 1997

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References

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