Hostname: page-component-cd9895bd7-gbm5v Total loading time: 0 Render date: 2024-12-26T18:25:44.405Z Has data issue: false hasContentIssue false
  • English
  • Français

The Influence of Weak Links and Oxygen Deficiency on Electrical Properties of Bi-2212 and Ti-2212 Hts Thin Films

Published online by Cambridge University Press:  15 February 2011

Jon L. Schindler ,
Frank Dimeo Jr. ,
Carolyn R. Duran ,
Bruce J. Hinds ,
Bruce W. Wessels ,
Tobin J. Marks  and
Carl R. Kannewurf
Jon L. Schindler
Affiliation:
Science and Technology Center for Superconductivity, Northwestern University, Evanston, IL 60208–3118 EECS Department
Frank Dimeo Jr.
Affiliation:
Science and Technology Center for Superconductivity, Northwestern University, Evanston, IL 60208–3118 MS&E Department
Carolyn R. Duran
Affiliation:
Science and Technology Center for Superconductivity, Northwestern University, Evanston, IL 60208–3118 MS&E Department
Bruce J. Hinds
Affiliation:
Science and Technology Center for Superconductivity, Northwestern University, Evanston, IL 60208–3118 Chemistry Department
Bruce W. Wessels
Affiliation:
Science and Technology Center for Superconductivity, Northwestern University, Evanston, IL 60208–3118 MS&E Department
Tobin J. Marks
Affiliation:
Science and Technology Center for Superconductivity, Northwestern University, Evanston, IL 60208–3118 Chemistry Department
Carl R. Kannewurf
Affiliation:
Science and Technology Center for Superconductivity, Northwestern University, Evanston, IL 60208–3118 EECS Department
Get access

Abstract

Thin films of the Bi-2212 and T1–2212 compounds were prepared by MOCVD deposition techniques. Resistivity versus temperature and critical current density measurements were used to characterize the electrical properties. An analysis of the data based on a proposed model determined the influence of intragranular weak links. Thin film samples in both systems with near optimum oxygen doping showed a correlation between the slope and magnitude of the resistivity in the normal state. Samples with reduced oxygen content displayed a strong increase in the intragrain boundary resistance, consistent with weak link defects. The results agree with a similar analysis of YBCO samples and support a common mechanism for the development of weak links in cuprates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 401: Symposium G – Epitaxial Oxide Thin Films II , 1995 , 315
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Beasley, M. R., IEEE Trans. Appl. Superconductivity, vol.5, pp. 141–151, 1995.Google Scholar
[2] Halbritter, J., Phys. Rev. B, vol.48, pp. 9735–9746, 1993.Google Scholar
[3] DiMeo, F. Jr., Wessels, B. W., Neumayer, D. A., Marks, T. J., Schindler, J. L. and Kannewurf, C. R., in Metal-Organic Chemical Vapor Deposition of Electronic Ceramics, Mat. Res. Soc. Symp. Proc., 335, 1993, 285–290.Google Scholar
[4] DiMeo, F. Jr., Ph.D. Thesis, Northwestern University, 1994, (unpublished).Google Scholar
[5] Hinds, B. J., Schulz, D. L., Neumayer, D. A., Han, B., Marks, T. J., Wang, Y. Y., Dravid, V. P., Schindler, J. L., Hogan, T. P. and Kannewurf, C. R., Appl. Phys. Lett., vol.65, pp. 231–233, 1994.Google Scholar
[6] Hinds, B. J., Studebaker, D. B., Chen, J., McNeely, R. J., Han, B., Schindler, J. L., Hogan, T. P., Kannewurf, C. R. and Marks, T. J., J. de Physique IV, vol. C5, pp. 391–405, 1995.Google Scholar
[7] Lyding, J. W., Marcy, H. O., Marks, T. J. and Kannewurf, C. R., IEEE Trans. Instrum. and Meas., vol.37, pp. 76–80, 1988.Google Scholar
[8] Schindler, J. L., Thesis, M.S., Northwestern University, 1992, (unpublished).Google Scholar
[9] Shokoohi, F. K., Schiavone, L. M., Rogers, C. T., Inam, A., Wu, X. D., Nazar, L. and Venkatesan, T., Appl. Phys. Lett., vol.55, pp. 2661–2663, 1989.Google Scholar
[10] Martin, S., Fiory, A. T., Fleming, R. M., Schneemeyer, L. F. and Waszczak, J. V., Phys. Rev. Lett., vol.60, pp. 2194–2196, 1988.Google Scholar
[11] Batlogg, B., Hwang, H. Y., Takagi, H., Cava, R. J., Kao, H. L. and Kwo, J., Phys. C, vol.235–240, pp. 130–133, 1994.Google Scholar
[12] Yasuda, T., Tanako, S. and Rinderer, L., Phys. C, vol.208, pp. 385–390, 1993.Google Scholar
[13] Feenstra, R., Christen, D. K., Klabunde, C. E. and Budai, J. D., Phys. Rev. B, vol.45, pp. 7555–7558, 1992.Google Scholar
[14] Russek, S. E., Lathrop, D. K., Moeckly, B. H., Buhrman, R. A., Shin, D. H. and Silcox, J., Appl. Phys. Lett., vol.57, pp. 1155–1157, 1990.Google Scholar
[15] Halbritter, J., Phys. Rev. B, vol.46, pp. 14,861 – 14,871, 1992.Google Scholar
[16] Presland, M. R., Tallon, J. L., Buckley, R. G., Liu, R. S. and Flower, N. E., Phys. C, vol.176, pp. 95–105, 1991.Google Scholar