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Influence of the Deposition Parameters on the Electrical and Mechanical Properties of Physically Vapor-Deposited Iridium and Rhodium Thin Films

Published online by Cambridge University Press:  10 February 2011

Ilan Golecki  and
Margaret Eagan
Ilan Golecki
Affiliation:
Phone(973) 455-4938; Fax(973)455-4339 or -3008; e-mail:Ilan.Golecki@alliedsignal.com
Margaret Eagan
Affiliation:
Honeywell International, Inc. (formerly AlliedSignal, Inc.), Research and Technology, 101Columbia Road, Morristown, NJ 07962
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Abstract

Iridium and rhodium thin films have been formed by e-gun physical vapor deposition on thin-chromium-coated, thermally-oxidized, silicon substrates. Cr, Ir and Rh deposition rates and substrate temperature during deposition were measured and controlled. The effects of the latter deposition parameters on the sheet resistance and stress of the Ir and Rh films are presented and it is demonstrated that both stress and sheet resistance can be desirably minimized by proper choice of the process conditions. The resistivity of these Rh and Ir thin films has been measured at room temperature. Rh can be formed in a wider process window than Ir. Rh films with Rsh = 0.1 Ω/square have been obtained at a thickness of 0.6 ¼m.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 594: Symposium V – Thin Films - Stresses & Mechanical Properties VIII , 1999 , 105
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

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