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Influence of Interface Roughness Scattering on Electron Mobility in GaAs-Al0.3Ga0.7 as Two Dimensional Electron Gas (2DEG) Heterostructures

  • Bin Yang (a1), Yong-Hai Cheng (a1), Zhan-Guo Wang (a1), Ji-Ben Liang (a1), Qi-Wei Liao (a1), Lan-Ying Lin (a1), Zhan-Ping Zhu (a1), Bo Xu (a1) and Wei Li (a1)...

Abstract

We have studied the influence of interface roughness scattering on the mobility of two-dimensional electron gas(2DEG) in GaAs-AlGaAs modulation-doped heterostructures(MDH) both experimentally and theoretically. When the background ionized impurity concentration in the GaAs layer is smaller than 2.5×1015cm-3, our investigation shows that interface roughness scattering is the dominant scattering mechanism in the high 2DEG density(Nş ≥5× 1011cm2) GaAs-AlGaAs MDH. We also demonstrate that interface roughness scattering is about an order of magnitude stronger than alloy disorder scattering in GaAs-AlGaAs MDH if the AlGaAs/GaAs interface fluctuation is only one monolayer of GaAs.

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MRS Online Proceedings Library (OPL)
  • ISSN: -
  • EISSN: 1946-4274
  • URL: /core/journals/mrs-online-proceedings-library-archive
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