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Influence of Interface Roughness Scattering on Electron Mobility in GaAs-Al0.3Ga0.7 as Two Dimensional Electron Gas (2DEG) Heterostructures

Published online by Cambridge University Press:  21 February 2011

Bin Yang ,
Yong-Hai Cheng ,
Zhan-Guo Wang ,
Ji-Ben Liang ,
Qi-Wei Liao ,
Lan-Ying Lin ,
Zhan-Ping Zhu ,
Bo Xu  and
Wei Li
Bin Yang
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Yong-Hai Cheng
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Zhan-Guo Wang
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Ji-Ben Liang
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Qi-Wei Liao
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Lan-Ying Lin
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Zhan-Ping Zhu
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Bo Xu
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
Wei Li
Affiliation:
Laboratory of Semiconductor Materials Science, Institute of Semiconductors Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, P.R. China
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Abstract

We have studied the influence of interface roughness scattering on the mobility of two-dimensional electron gas(2DEG) in GaAs-AlGaAs modulation-doped heterostructures(MDH) both experimentally and theoretically. When the background ionized impurity concentration in the GaAs layer is smaller than 2.5×1015cm-3, our investigation shows that interface roughness scattering is the dominant scattering mechanism in the high 2DEG density(Nş ≥5× 1011cm2) GaAs-AlGaAs MDH. We also demonstrate that interface roughness scattering is about an order of magnitude stronger than alloy disorder scattering in GaAs-AlGaAs MDH if the AlGaAs/GaAs interface fluctuation is only one monolayer of GaAs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 355: Symposium B1 – Evolution of Thin-Film and Surface Structure and Morphology , 1994 , 545
Copyright
Copyright © Materials Research Society 1995

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References

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