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Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs

Published online by Cambridge University Press:  15 February 2011

V. V. Chaldyshev ,
A. E. Kunitsyn ,
N. N. Faleev ,
V. V. Preobrazhenskii ,
M. A. Putyato ,
B. R. Semyagin  and
V. V. Tretyakov
V. V. Chaldyshev
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
A. E. Kunitsyn
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
N. N. Faleev
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
V. V. Preobrazhenskii
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
M. A. Putyato
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
B. R. Semyagin
Affiliation:
Institute of Semiconductor Physics, 630090 Novosibirsk, Russia
V. V. Tretyakov
Affiliation:
Ioffe Physico-Technical Institute, 194021 St.Petersburg, Russia
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Abstract

We show that in contrast to Si donor and Be acceptor doping, isovalent In impurity doping enhances arsenic excess in the GaAs films grown by molecular beam epitaxy at low temperature. This effect is due to an increase in the concentration of arsenic antisite defects. Gallium vacancy related defects are detected only in the samples annealed at high temperature. Their concentration is found to be higher in the indium-free material than in the indium doped one

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 442: Symposium E – Defects in Electronic Materials II , 1996 , 491
Copyright
Copyright © Materials Research Society 1997

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