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Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs

  • V. V. Chaldyshev (a1), A. E. Kunitsyn (a1), N. N. Faleev (a1), V. V. Preobrazhenskii (a2), M. A. Putyato (a2), B. R. Semyagin (a2) and V. V. Tretyakov (a1)...

Abstract

We show that in contrast to Si donor and Be acceptor doping, isovalent In impurity doping enhances arsenic excess in the GaAs films grown by molecular beam epitaxy at low temperature. This effect is due to an increase in the concentration of arsenic antisite defects. Gallium vacancy related defects are detected only in the samples annealed at high temperature. Their concentration is found to be higher in the indium-free material than in the indium doped one

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Influence Of Donor, Acceptor, And Isovalent Impurity Doping On Arsenic Excess And Point Defects In Low Temperature Grown GaAs

  • V. V. Chaldyshev (a1), A. E. Kunitsyn (a1), N. N. Faleev (a1), V. V. Preobrazhenskii (a2), M. A. Putyato (a2), B. R. Semyagin (a2) and V. V. Tretyakov (a1)...

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