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The Influence of a-Si:H/Substrate Interface on Electronic Properties Of Me-a-Si:H - Substrate Structures

Published online by Cambridge University Press:  15 February 2011

B.G. Budaguan ,
A.A. Aivazov  and
M.N. Meytin
B.G. Budaguan
Affiliation:
Moscow Institute of Electronic Engineering, Department of Microtechnology, 103498, Russia
A.A. Aivazov
Affiliation:
Moscow Institute of Electronic Engineering, Department of Microtechnology, 103498, Russia
M.N. Meytin
Affiliation:
Moscow Institute of Electronic Engineering, Department of Microtechnology, 103498, Russia
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Abstract

We have performed the investigations of temperature dependencies of dark conductivity σd(T) in a-Si:H films deposited on different substrates (glass, oxynitride, polyimide film) at the temperature range of 20 °C to 250 °C. The temperature dependence of dark conductivity of a-Si:H on glass and oxynitride demonstrates the “kink” at 80 –160 °C. This “kink” wasn't observed in σd(T) measurements of a-Si:H on polyimide. It has been shown that the appearance of “kink” is connected with substrate material, value of applied electric field and its polarity. The relaxation nature of the “kink” is also suggested. Two transport mechanisms of charge carriers are proposed - transport via material bulk and transport via a-Si:H/substrate interface. It is shown that “kink” occurs when transport via interface becomes predominant. The mathematical simulation of this process is also presented.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 483
Copyright
Copyright © Materials Research Society 1995

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References

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