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In Situ Investigation of Amorphous Silicon / Silicon Nitride Interfaces by Infrared Ellipsometry

Published online by Cambridge University Press:  22 February 2011

H. Shirai ,
B. Drévillon  and
R. Ossikovski
H. Shirai
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR 258 du CNRS) Ecole Polytechnique, 91128 Palaiseau, France.
B. Drévillon
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR 258 du CNRS) Ecole Polytechnique, 91128 Palaiseau, France.
R. Ossikovski
Affiliation:
Laboratoire de Physique des Interfaces et des Couches Minces (UPR 258 du CNRS) Ecole Polytechnique, 91128 Palaiseau, France.
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Abstract

A detailed in situ study, by Infrared Phase Modulated Ellipsometry (IRPME), of interfaces between amorphous silicon (a-Si:H) and silicon nitride (a-SiNx) is presented. A behaviour compatible with a sharp interface is observed when a-SiNx is deposited on top of a-Si:H, the underlayer material being very weakly influenced by the deposition of the overlayer. In contrast a graded transition is observed when a-SiNx is deposited first. In the latter case, the IR measurements directly reveal a nitrogen incorporation in the first monolayers of a-Si:H together with an increase of intensity of the SiH bonds at the interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 284: Symposium G – Amorphous Insulating Thin Films , 1992 , 425
Copyright
Copyright © Materials Research Society 1993

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References

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