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Improvement In Electrical Properties of Polycrystalline Silicon Films by The H2O Vapor Annealing Method

Published online by Cambridge University Press:  17 March 2011

Toshiyuki Sameshima ,
Katsimi Asada ,
Yoshiyuki Tsunoda  and
Yoshiyasu Kaneko
Toshiyuki Sameshima
Affiliation:
University of Agriculture and Technology, Faculty of Technology, Tokyo 184-8588, JAPAN
Katsimi Asada
Affiliation:
University of Agriculture and Technology, Faculty of Technology, Tokyo 184-8588, JAPAN
Yoshiyuki Tsunoda
Affiliation:
University of Agriculture and Technology, Faculty of Technology, Tokyo 184-8588, JAPAN
Yoshiyasu Kaneko
Affiliation:
University of Agriculture and Technology, Faculty of Technology, Tokyo 184-8588, JAPAN
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Abstract

Improvement of electrical properties by heat treatment with high-pressure H2O vapor was discussed for 7.4×1017cm−3 phosphorus-doped pulsed laser crystallized silicon films. The analysis of the electrical conductivity resulted in that 1.3×106-Pa-H2O vapor annealing at 270°C for 3 h reduced the density of defect states from 5.5 ×1018 cm−3(as crystallized) to 5.0×1017 cm−3 for tail states and from 1.0×1018 cm−3(as crystallized) to 3.0×1017 cm−3 for deep level defect states. The potential barrier height at grain boundaries decreased from 0.34 eV (as crystallized) to 0.05 eV by the heat treatment. The combination of oxygen plasma with high-pressure H2O vapor annealing effectively reduced the densities of defect tail sates as well as deep level defect states. It achieved a high performance of thin film transistors with a threshold voltage of 1.3 V and an effective mobility of 160 cm2/Vs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 664: Symposium A – Amorphous and Heterogeneous Silicon-Based Films-2001 , 2001 , A16.3
Copyright
Copyright © Materials Research Society 2001

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References

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